Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics
Abstract Wafer‐scale deposition of high‐𝜅 gate dielectrics compatible with atomically thin van der Waals layered semiconductors (e.g., MoS2, WS2, WSe2) is urgently needed for practical applications of field effect transistors based on 2D materials. A study on a high‐𝜅 molecular crystal antimony trio...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-11-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400205 |
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