Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics
Abstract Wafer‐scale deposition of high‐𝜅 gate dielectrics compatible with atomically thin van der Waals layered semiconductors (e.g., MoS2, WS2, WSe2) is urgently needed for practical applications of field effect transistors based on 2D materials. A study on a high‐𝜅 molecular crystal antimony trio...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-11-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400205 |
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| author | Alok Ranjan Lunjie Zeng Eva Olsson |
| author_facet | Alok Ranjan Lunjie Zeng Eva Olsson |
| author_sort | Alok Ranjan |
| collection | DOAJ |
| description | Abstract Wafer‐scale deposition of high‐𝜅 gate dielectrics compatible with atomically thin van der Waals layered semiconductors (e.g., MoS2, WS2, WSe2) is urgently needed for practical applications of field effect transistors based on 2D materials. A study on a high‐𝜅 molecular crystal antimony trioxide (Sb2O3) gate dielectric examined the role of electrode material on dielectric degradation and breakdown. It is demonstrated that the thin films of Sb2O3 can be uniformly deposited on a wafer scale. The current–voltage (I–V) curves show tightly controlled distributions of both leakage current and breakdown voltage. Electrical measurements reveal that defects are generated gradually upon electrical stressing. The evaluation of degradation is based on charge trapping, stress‐induced leakage current, and dielectric breakdown measurements. The breakdown voltage distribution follows a tight monomodal Weibull distribution suggesting a high quality of the film. Comparing Ti and Au as gate electrodes, both the breakdown field and the tunnel current are affected by the choice of electrode material. Transmission electron microscopy reveals that the chemistry at the electrode/Sb2O3 interface plays an important role and that Ti scavenges oxygen from the Sb2O3, forming a defective oxide layer at the Ti/Sb2O3 interface. For the Au electrode, this interfacial reaction is completely absent, improving the dielectric performance. |
| format | Article |
| id | doaj-art-3ebd7a7542bb4f6483b2720c43354ee4 |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-3ebd7a7542bb4f6483b2720c43354ee42025-08-20T02:13:19ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-11-011011n/an/a10.1002/aelm.202400205Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D ElectronicsAlok Ranjan0Lunjie Zeng1Eva Olsson2Department of Physics Chalmers University of Technology Gothenburg 41296 SwedenDepartment of Physics Chalmers University of Technology Gothenburg 41296 SwedenDepartment of Physics Chalmers University of Technology Gothenburg 41296 SwedenAbstract Wafer‐scale deposition of high‐𝜅 gate dielectrics compatible with atomically thin van der Waals layered semiconductors (e.g., MoS2, WS2, WSe2) is urgently needed for practical applications of field effect transistors based on 2D materials. A study on a high‐𝜅 molecular crystal antimony trioxide (Sb2O3) gate dielectric examined the role of electrode material on dielectric degradation and breakdown. It is demonstrated that the thin films of Sb2O3 can be uniformly deposited on a wafer scale. The current–voltage (I–V) curves show tightly controlled distributions of both leakage current and breakdown voltage. Electrical measurements reveal that defects are generated gradually upon electrical stressing. The evaluation of degradation is based on charge trapping, stress‐induced leakage current, and dielectric breakdown measurements. The breakdown voltage distribution follows a tight monomodal Weibull distribution suggesting a high quality of the film. Comparing Ti and Au as gate electrodes, both the breakdown field and the tunnel current are affected by the choice of electrode material. Transmission electron microscopy reveals that the chemistry at the electrode/Sb2O3 interface plays an important role and that Ti scavenges oxygen from the Sb2O3, forming a defective oxide layer at the Ti/Sb2O3 interface. For the Au electrode, this interfacial reaction is completely absent, improving the dielectric performance.https://doi.org/10.1002/aelm.2024002052D materialsgate dielectrichigh‐𝜅molecular crystalreliabilitySb2O3 |
| spellingShingle | Alok Ranjan Lunjie Zeng Eva Olsson Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics Advanced Electronic Materials 2D materials gate dielectric high‐𝜅 molecular crystal reliability Sb2O3 |
| title | Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics |
| title_full | Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics |
| title_fullStr | Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics |
| title_full_unstemmed | Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics |
| title_short | Electrodes for High‐𝜅 Molecular Crystal Antimony Trioxide Gate Dielectrics for 2D Electronics |
| title_sort | electrodes for high 𝜅 molecular crystal antimony trioxide gate dielectrics for 2d electronics |
| topic | 2D materials gate dielectric high‐𝜅 molecular crystal reliability Sb2O3 |
| url | https://doi.org/10.1002/aelm.202400205 |
| work_keys_str_mv | AT alokranjan electrodesforhighκmolecularcrystalantimonytrioxidegatedielectricsfor2delectronics AT lunjiezeng electrodesforhighκmolecularcrystalantimonytrioxidegatedielectricsfor2delectronics AT evaolsson electrodesforhighκmolecularcrystalantimonytrioxidegatedielectricsfor2delectronics |