Realization of screen-printed silver paste grid contacts in the III-V solar cell
The integration of screen-printed silver paste with III-V solar cells offers a promising approach to broaden potential application. Nonetheless, the challenge of establishing an ohmic contact between the narrow linewidth paste electrodes and the III-V contact layer remains unresolved. In this study,...
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Elsevier
2025-10-01
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| Series: | Materials & Design |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S0264127525009979 |
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| author | Qiangjian Sun Junhua Long Pan Dai Xinzhou Wu Erpeng Li Min Zhou Xiaoxu Wu Zhitao Chen Menglu Yu Shuhong Nie Qing Gong Wencong Yan Wenming Su Shulong Lu |
| author_facet | Qiangjian Sun Junhua Long Pan Dai Xinzhou Wu Erpeng Li Min Zhou Xiaoxu Wu Zhitao Chen Menglu Yu Shuhong Nie Qing Gong Wencong Yan Wenming Su Shulong Lu |
| author_sort | Qiangjian Sun |
| collection | DOAJ |
| description | The integration of screen-printed silver paste with III-V solar cells offers a promising approach to broaden potential application. Nonetheless, the challenge of establishing an ohmic contact between the narrow linewidth paste electrodes and the III-V contact layer remains unresolved. In this study, the screen-printing technology was developed to replace conventional alloy electrodes in III-V solar cells. The contact resistance between silver pastes and the InGaAs contact layer was systematically optimized, yielding a specific contact resistance of 5.79 × 10-5 Ω·cm2 at a low-temperature annealing of 300 °C. The performance enhancement is attributed to the capacity of silver particles in the paste to form interparticle contacts, thereby constructing efficient conductive pathways and reducing intrinsic resistance. Furthermore, the silver diffusion into the contact layer enhances the likelihood of the tunneling effect. To mitigate shadowing losses associated with screen-printed electrodes, the knotless grid design enabled the narrow grid line width of 26 μm in the InGaAs solar cell. The photovoltaic conversion efficiency of the screen-printed InGaAs solar cell reached 10.30 % under the AM1.5G spectrum, comparable to that of cells prepared by conventional e-beam and photolithography techniques. |
| format | Article |
| id | doaj-art-3ea809e1a8bd415f8fe0a0814ce37ace |
| institution | Kabale University |
| issn | 0264-1275 |
| language | English |
| publishDate | 2025-10-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials & Design |
| spelling | doaj-art-3ea809e1a8bd415f8fe0a0814ce37ace2025-08-24T05:11:20ZengElsevierMaterials & Design0264-12752025-10-0125811457710.1016/j.matdes.2025.114577Realization of screen-printed silver paste grid contacts in the III-V solar cellQiangjian Sun0Junhua Long1Pan Dai2Xinzhou Wu3Erpeng Li4Min Zhou5Xiaoxu Wu6Zhitao Chen7Menglu Yu8Shuhong Nie9Qing Gong10Wencong Yan11Wenming Su12Shulong Lu13Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; Corresponding authors.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; Corresponding authors.School of Information Engineering, Huzhou University, Huzhou 313000, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; School of Information Engineering, Huzhou University, Huzhou 313000, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; Corresponding authors.Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC), Hefei 230026, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC), Hefei 230026, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC), Hefei 230026, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC), Hefei 230026, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; School of Nano-Tech and Nano-Bionics, University of Science and Technology of China (USTC), Hefei 230026, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; Printable Electronics Research Center, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China; Corresponding authors.The integration of screen-printed silver paste with III-V solar cells offers a promising approach to broaden potential application. Nonetheless, the challenge of establishing an ohmic contact between the narrow linewidth paste electrodes and the III-V contact layer remains unresolved. In this study, the screen-printing technology was developed to replace conventional alloy electrodes in III-V solar cells. The contact resistance between silver pastes and the InGaAs contact layer was systematically optimized, yielding a specific contact resistance of 5.79 × 10-5 Ω·cm2 at a low-temperature annealing of 300 °C. The performance enhancement is attributed to the capacity of silver particles in the paste to form interparticle contacts, thereby constructing efficient conductive pathways and reducing intrinsic resistance. Furthermore, the silver diffusion into the contact layer enhances the likelihood of the tunneling effect. To mitigate shadowing losses associated with screen-printed electrodes, the knotless grid design enabled the narrow grid line width of 26 μm in the InGaAs solar cell. The photovoltaic conversion efficiency of the screen-printed InGaAs solar cell reached 10.30 % under the AM1.5G spectrum, comparable to that of cells prepared by conventional e-beam and photolithography techniques.http://www.sciencedirect.com/science/article/pii/S0264127525009979Screen-printedIII-V solar cellsSilver pasteOhmic contactAnnealing |
| spellingShingle | Qiangjian Sun Junhua Long Pan Dai Xinzhou Wu Erpeng Li Min Zhou Xiaoxu Wu Zhitao Chen Menglu Yu Shuhong Nie Qing Gong Wencong Yan Wenming Su Shulong Lu Realization of screen-printed silver paste grid contacts in the III-V solar cell Materials & Design Screen-printed III-V solar cells Silver paste Ohmic contact Annealing |
| title | Realization of screen-printed silver paste grid contacts in the III-V solar cell |
| title_full | Realization of screen-printed silver paste grid contacts in the III-V solar cell |
| title_fullStr | Realization of screen-printed silver paste grid contacts in the III-V solar cell |
| title_full_unstemmed | Realization of screen-printed silver paste grid contacts in the III-V solar cell |
| title_short | Realization of screen-printed silver paste grid contacts in the III-V solar cell |
| title_sort | realization of screen printed silver paste grid contacts in the iii v solar cell |
| topic | Screen-printed III-V solar cells Silver paste Ohmic contact Annealing |
| url | http://www.sciencedirect.com/science/article/pii/S0264127525009979 |
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