High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements
Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically h...
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2025-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/14/1072 |
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| author | Lingzhi Jin Wenjuan Xu Yangzhou Qian Tao Ji Kefan Wu Liang Huang Feng Chen Nanchang Huang Shu Xing Zhen Shao Wen Li Yuyu Liu Linghai Xie |
| author_facet | Lingzhi Jin Wenjuan Xu Yangzhou Qian Tao Ji Kefan Wu Liang Huang Feng Chen Nanchang Huang Shu Xing Zhen Shao Wen Li Yuyu Liu Linghai Xie |
| author_sort | Lingzhi Jin |
| collection | DOAJ |
| description | Organic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically hindered small-molecule SFDBAO with rigid orthogonal configuration and a donor–acceptor (D-A) structure as a molecular-scale charge storage element demonstrated significantly higher charge trapping ability than other small-molecule materials such as C<sub>60</sub> and Alq<sub>3</sub>. The ONVM based on 10% SFDBAO/PS presents ambipolar memory behaviors with a wide memory window (146 V), a fast-switching speed (20 ms), an excellent retention time (over 5 × 10<sup>4</sup> s), and stable reversibility (36 cycles without any noticeable decay). By applying different gate voltages, the above ONVM shows reliable four-level data storage characteristics. The investigation demonstrates that the strategical bulk-heterojunction-like tunneling and trapping elements composed of small-molecule materials and polymers exhibit promising potential for high-performance ambipolar ONVMs. |
| format | Article |
| id | doaj-art-3e8952e3694e42df9e4e5382849fe8e5 |
| institution | DOAJ |
| issn | 2079-4991 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-3e8952e3694e42df9e4e5382849fe8e52025-08-20T03:08:06ZengMDPI AGNanomaterials2079-49912025-07-011514107210.3390/nano15141072High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping ElementsLingzhi Jin0Wenjuan Xu1Yangzhou Qian2Tao Ji3Kefan Wu4Liang Huang5Feng Chen6Nanchang Huang7Shu Xing8Zhen Shao9Wen Li10Yuyu Liu11Linghai Xie12School of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaState Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, ChinaSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaState Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, ChinaState Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, ChinaSchool of Electronics Information Engineering & School of Integrated Circuits, Nanjing University of Industry Technology, Nanjing 210023, ChinaState Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NJUPT), Nanjing 210023, ChinaOrganic nonvolatile transistor memories (ONVMs) using a hybrid spiro [fluorene-9,7′-dibenzo [c, h] acridine]-5′-one (SFDBAO)/polystyrene (PS) film as bulk-heterojunction-like tunneling and trapping elements were fabricated. From the characterization of the 10% SFDBAO/PS based on ONVM, a sterically hindered small-molecule SFDBAO with rigid orthogonal configuration and a donor–acceptor (D-A) structure as a molecular-scale charge storage element demonstrated significantly higher charge trapping ability than other small-molecule materials such as C<sub>60</sub> and Alq<sub>3</sub>. The ONVM based on 10% SFDBAO/PS presents ambipolar memory behaviors with a wide memory window (146 V), a fast-switching speed (20 ms), an excellent retention time (over 5 × 10<sup>4</sup> s), and stable reversibility (36 cycles without any noticeable decay). By applying different gate voltages, the above ONVM shows reliable four-level data storage characteristics. The investigation demonstrates that the strategical bulk-heterojunction-like tunneling and trapping elements composed of small-molecule materials and polymers exhibit promising potential for high-performance ambipolar ONVMs.https://www.mdpi.com/2079-4991/15/14/1072nonvolatile transistor memorysmall-molecule materialscharge trapping elements |
| spellingShingle | Lingzhi Jin Wenjuan Xu Yangzhou Qian Tao Ji Kefan Wu Liang Huang Feng Chen Nanchang Huang Shu Xing Zhen Shao Wen Li Yuyu Liu Linghai Xie High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements Nanomaterials nonvolatile transistor memory small-molecule materials charge trapping elements |
| title | High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements |
| title_full | High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements |
| title_fullStr | High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements |
| title_full_unstemmed | High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements |
| title_short | High-Performance Multilevel and Ambipolar Nonvolatile Organic Transistor Memory Using Small-Molecule SFDBAO and PS as Charge Trapping Elements |
| title_sort | high performance multilevel and ambipolar nonvolatile organic transistor memory using small molecule sfdbao and ps as charge trapping elements |
| topic | nonvolatile transistor memory small-molecule materials charge trapping elements |
| url | https://www.mdpi.com/2079-4991/15/14/1072 |
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