High-efficiency SOI-based metalenses at telecommunication wavelengths
We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize hig...
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| Format: | Article |
| Language: | English |
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De Gruyter
2022-10-01
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| Series: | Nanophotonics |
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| Online Access: | https://doi.org/10.1515/nanoph-2022-0480 |
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| author | Ryu Taesu Kim Moohyuk Hwang Yongsop Kim Myung-Ki Yang Jin-Kyu |
| author_facet | Ryu Taesu Kim Moohyuk Hwang Yongsop Kim Myung-Ki Yang Jin-Kyu |
| author_sort | Ryu Taesu |
| collection | DOAJ |
| description | We demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC. |
| format | Article |
| id | doaj-art-3e6ae01b20524d5cb7f09b0f73edc1ef |
| institution | OA Journals |
| issn | 2192-8614 |
| language | English |
| publishDate | 2022-10-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj-art-3e6ae01b20524d5cb7f09b0f73edc1ef2025-08-20T01:53:26ZengDe GruyterNanophotonics2192-86142022-10-0111214697470410.1515/nanoph-2022-0480High-efficiency SOI-based metalenses at telecommunication wavelengthsRyu Taesu0Kim Moohyuk1Hwang Yongsop2Kim Myung-Ki3Yang Jin-Kyu4Department of Optical Engineering, Kongju National University, Cheonan, 31080, Republic of KoreaKU‐KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of KoreaInstitute of Application and Fusion for Light, Kongju National University, Cheonan, 31080, Republic of KoreaKU‐KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of KoreaDepartment of Optical Engineering, Kongju National University, Cheonan, 31080, Republic of KoreaWe demonstrated silicon-on-insulator (SOI)-based high-efficiency metalenses at telecommunication wavelengths that are integrable with a standard 220 nm-thick silicon photonic chip. A negative electron-beam resist (ma-N) was placed on top of the Si nanodisk, providing vertical symmetry to realize high efficiency. A metasurface with a Si/ma-N disk array was numerically investigated to design a metalens that showed that a Si/ma-N metalens could focus the incident beam six times stronger than a Si metalens without ma-N. Metalenses with a thick ma-N layer have been experimentally demonstrated to focus the beam strongly at the focal point and have a long depth of field at telecommunication wavelengths. A short focal length of 10 μm with a wavelength-scale spot diameter of approximately 2.5 μm was realized at 1530 nm. This miniaturized high-efficiency metalens with a short focal length can provide a platform for ultrasensitive sensors on silicon photonic IC.https://doi.org/10.1515/nanoph-2022-0480metalensmetasurfacesilicon photonics |
| spellingShingle | Ryu Taesu Kim Moohyuk Hwang Yongsop Kim Myung-Ki Yang Jin-Kyu High-efficiency SOI-based metalenses at telecommunication wavelengths Nanophotonics metalens metasurface silicon photonics |
| title | High-efficiency SOI-based metalenses at telecommunication wavelengths |
| title_full | High-efficiency SOI-based metalenses at telecommunication wavelengths |
| title_fullStr | High-efficiency SOI-based metalenses at telecommunication wavelengths |
| title_full_unstemmed | High-efficiency SOI-based metalenses at telecommunication wavelengths |
| title_short | High-efficiency SOI-based metalenses at telecommunication wavelengths |
| title_sort | high efficiency soi based metalenses at telecommunication wavelengths |
| topic | metalens metasurface silicon photonics |
| url | https://doi.org/10.1515/nanoph-2022-0480 |
| work_keys_str_mv | AT ryutaesu highefficiencysoibasedmetalensesattelecommunicationwavelengths AT kimmoohyuk highefficiencysoibasedmetalensesattelecommunicationwavelengths AT hwangyongsop highefficiencysoibasedmetalensesattelecommunicationwavelengths AT kimmyungki highefficiencysoibasedmetalensesattelecommunicationwavelengths AT yangjinkyu highefficiencysoibasedmetalensesattelecommunicationwavelengths |