Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator
Using industry standard TSMC 90 nm CMOS technology, a broadband and high-isolation active quasi-circulator MMIC was fabricated to meet the needs of future communication system integration. An active balun and phase inverter stage made of a common-source (CS) field-effect transistor (FET) comprised t...
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MDPI AG
2024-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/14/22/10083 |
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| author | Sida Tang Xiaoqing Liu Yanfeng Jiang Jiahui Guan Peng Li Jitai Han |
| author_facet | Sida Tang Xiaoqing Liu Yanfeng Jiang Jiahui Guan Peng Li Jitai Han |
| author_sort | Sida Tang |
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| description | Using industry standard TSMC 90 nm CMOS technology, a broadband and high-isolation active quasi-circulator MMIC was fabricated to meet the needs of future communication system integration. An active balun and phase inverter stage made of a common-source (CS) field-effect transistor (FET) comprised the quasi-circulator that was suggested. A cascade CS stage was used to produce the active balun, which increased the isolation of |S12| and |S23| through the unilateral characteristic of the FET and allowed for transmission of |S21| and |S32|. Further, a CS FET connected in parallel to ports 1 and 3 for phase cancellation can effectively increase the quasi-circulator’s isolation |S31|. Theoretical analysis for the detailed circuit was shown in the main paper. The results show that all isolations are better than 20 dB over 5–33 GHz, and the measured findings reveal that the suggested quasi-circulator has an insertion loss of less than 10 dB. It is possible to reach an isolation level of 55 dB between ports 1 and 3, which is greater than present research. |
| format | Article |
| id | doaj-art-3e37fcfbcb8446deadfb49269de0ed49 |
| institution | OA Journals |
| issn | 2076-3417 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | MDPI AG |
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| series | Applied Sciences |
| spelling | doaj-art-3e37fcfbcb8446deadfb49269de0ed492025-08-20T02:26:58ZengMDPI AGApplied Sciences2076-34172024-11-0114221008310.3390/app142210083Design of a Broadband and High-Isolation CMOS Active Quasi-CirculatorSida Tang0Xiaoqing Liu1Yanfeng Jiang2Jiahui Guan3Peng Li4Jitai Han5Jiangsu Integrated Circuit Reliability Technology and Testing System Engineering Research Center, Wuxi University, Wuxi 214105, ChinaJiangsu Integrated Circuit Reliability Technology and Testing System Engineering Research Center, Wuxi University, Wuxi 214105, ChinaDepartment of Electrical Engineering, School of Internet of Things Engineering, Jiangnan University, Wuxi 214126, ChinaHongyuan Green Energy Co., Ltd., Wuxi 214218, ChinaSchool of Automation, Wuxi University, Wuxi 214105, ChinaSchool of Automation, Wuxi University, Wuxi 214105, ChinaUsing industry standard TSMC 90 nm CMOS technology, a broadband and high-isolation active quasi-circulator MMIC was fabricated to meet the needs of future communication system integration. An active balun and phase inverter stage made of a common-source (CS) field-effect transistor (FET) comprised the quasi-circulator that was suggested. A cascade CS stage was used to produce the active balun, which increased the isolation of |S12| and |S23| through the unilateral characteristic of the FET and allowed for transmission of |S21| and |S32|. Further, a CS FET connected in parallel to ports 1 and 3 for phase cancellation can effectively increase the quasi-circulator’s isolation |S31|. Theoretical analysis for the detailed circuit was shown in the main paper. The results show that all isolations are better than 20 dB over 5–33 GHz, and the measured findings reveal that the suggested quasi-circulator has an insertion loss of less than 10 dB. It is possible to reach an isolation level of 55 dB between ports 1 and 3, which is greater than present research.https://www.mdpi.com/2076-3417/14/22/10083broadbandisolationphase cancellationquasi-circulatoractive balun |
| spellingShingle | Sida Tang Xiaoqing Liu Yanfeng Jiang Jiahui Guan Peng Li Jitai Han Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator Applied Sciences broadband isolation phase cancellation quasi-circulator active balun |
| title | Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator |
| title_full | Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator |
| title_fullStr | Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator |
| title_full_unstemmed | Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator |
| title_short | Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator |
| title_sort | design of a broadband and high isolation cmos active quasi circulator |
| topic | broadband isolation phase cancellation quasi-circulator active balun |
| url | https://www.mdpi.com/2076-3417/14/22/10083 |
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