Design of a Broadband and High-Isolation CMOS Active Quasi-Circulator
Using industry standard TSMC 90 nm CMOS technology, a broadband and high-isolation active quasi-circulator MMIC was fabricated to meet the needs of future communication system integration. An active balun and phase inverter stage made of a common-source (CS) field-effect transistor (FET) comprised t...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-11-01
|
| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/14/22/10083 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Using industry standard TSMC 90 nm CMOS technology, a broadband and high-isolation active quasi-circulator MMIC was fabricated to meet the needs of future communication system integration. An active balun and phase inverter stage made of a common-source (CS) field-effect transistor (FET) comprised the quasi-circulator that was suggested. A cascade CS stage was used to produce the active balun, which increased the isolation of |S12| and |S23| through the unilateral characteristic of the FET and allowed for transmission of |S21| and |S32|. Further, a CS FET connected in parallel to ports 1 and 3 for phase cancellation can effectively increase the quasi-circulator’s isolation |S31|. Theoretical analysis for the detailed circuit was shown in the main paper. The results show that all isolations are better than 20 dB over 5–33 GHz, and the measured findings reveal that the suggested quasi-circulator has an insertion loss of less than 10 dB. It is possible to reach an isolation level of 55 dB between ports 1 and 3, which is greater than present research. |
|---|---|
| ISSN: | 2076-3417 |