Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction Diffusion
In order to apply Ga alloys to flexible and wearable electronic devices, it is crucial to verify the mechanical reliability of interconnections between Ga and various metal electrodes. This study investigated the phase transformation kinetics and microstructural evolution in the Ni/Ga couple. The di...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/15/6/520 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849472182115106816 |
|---|---|
| author | Jun Peng Tao Wang Shuai Zhang |
| author_facet | Jun Peng Tao Wang Shuai Zhang |
| author_sort | Jun Peng |
| collection | DOAJ |
| description | In order to apply Ga alloys to flexible and wearable electronic devices, it is crucial to verify the mechanical reliability of interconnections between Ga and various metal electrodes. This study investigated the phase transformation kinetics and microstructural evolution in the Ni/Ga couple. The diffusion reaction behavior between nickel and gallium was characterized from 323 K to 623 K for different annealing times. At temperatures lower than 323 K, no obvious intermetallic compound was identified after annealing, according to SEM observation. For reactions at temperatures higher than 423 K, the Ni<sub>3</sub>Ga<sub>7</sub> phase was identified as the only reaction product formed, occurring in a planar morphology along the Ni/Ga interface. The activation energy for the growth of Ni<sub>3</sub>Ga<sub>7</sub> was determined as 58.58 kJ/mol. The kinetic equation expressing the relationship between the thickness of interfacial intermetallic compound, annealing temperature, and time, is the following: <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>d</mi><mo>=</mo><mn>417174.55</mn><mrow><mrow><mi mathvariant="normal">exp</mi></mrow><mo></mo><mrow><mfenced separators="|"><mrow><mo>−</mo><mstyle scriptlevel="0" displaystyle="true"><mfrac><mrow><mn>58579</mn></mrow><mrow><mi>R</mi><mi>T</mi></mrow></mfrac></mstyle></mrow></mfenced><msup><mrow><mi>t</mi></mrow><mrow><mn>2.04</mn><mo>−</mo><mn>0.0024</mn><mi>T</mi></mrow></msup></mrow></mrow></mrow></semantics></math></inline-formula>. |
| format | Article |
| id | doaj-art-3dfda28644144d8ea4ee07107ef31c19 |
| institution | Kabale University |
| issn | 2073-4352 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj-art-3dfda28644144d8ea4ee07107ef31c192025-08-20T03:24:36ZengMDPI AGCrystals2073-43522025-05-0115652010.3390/cryst15060520Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction DiffusionJun Peng0Tao Wang1Shuai Zhang2College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaCollege of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaCollege of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, ChinaIn order to apply Ga alloys to flexible and wearable electronic devices, it is crucial to verify the mechanical reliability of interconnections between Ga and various metal electrodes. This study investigated the phase transformation kinetics and microstructural evolution in the Ni/Ga couple. The diffusion reaction behavior between nickel and gallium was characterized from 323 K to 623 K for different annealing times. At temperatures lower than 323 K, no obvious intermetallic compound was identified after annealing, according to SEM observation. For reactions at temperatures higher than 423 K, the Ni<sub>3</sub>Ga<sub>7</sub> phase was identified as the only reaction product formed, occurring in a planar morphology along the Ni/Ga interface. The activation energy for the growth of Ni<sub>3</sub>Ga<sub>7</sub> was determined as 58.58 kJ/mol. The kinetic equation expressing the relationship between the thickness of interfacial intermetallic compound, annealing temperature, and time, is the following: <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>d</mi><mo>=</mo><mn>417174.55</mn><mrow><mrow><mi mathvariant="normal">exp</mi></mrow><mo></mo><mrow><mfenced separators="|"><mrow><mo>−</mo><mstyle scriptlevel="0" displaystyle="true"><mfrac><mrow><mn>58579</mn></mrow><mrow><mi>R</mi><mi>T</mi></mrow></mfrac></mstyle></mrow></mfenced><msup><mrow><mi>t</mi></mrow><mrow><mn>2.04</mn><mo>−</mo><mn>0.0024</mn><mi>T</mi></mrow></msup></mrow></mrow></mrow></semantics></math></inline-formula>.https://www.mdpi.com/2073-4352/15/6/520galliumintermetallic compoundinterfacial diffusionkineticsnickel |
| spellingShingle | Jun Peng Tao Wang Shuai Zhang Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction Diffusion Crystals gallium intermetallic compound interfacial diffusion kinetics nickel |
| title | Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction Diffusion |
| title_full | Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction Diffusion |
| title_fullStr | Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction Diffusion |
| title_full_unstemmed | Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction Diffusion |
| title_short | Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction Diffusion |
| title_sort | growth kinetics of ni sub 3 sub ga sub 7 sub in ni ga system during interfacial reaction diffusion |
| topic | gallium intermetallic compound interfacial diffusion kinetics nickel |
| url | https://www.mdpi.com/2073-4352/15/6/520 |
| work_keys_str_mv | AT junpeng growthkineticsofnisub3subgasub7subinnigasystemduringinterfacialreactiondiffusion AT taowang growthkineticsofnisub3subgasub7subinnigasystemduringinterfacialreactiondiffusion AT shuaizhang growthkineticsofnisub3subgasub7subinnigasystemduringinterfacialreactiondiffusion |