Growth Kinetics of Ni<sub>3</sub>Ga<sub>7</sub> in Ni/Ga System During Interfacial Reaction Diffusion
In order to apply Ga alloys to flexible and wearable electronic devices, it is crucial to verify the mechanical reliability of interconnections between Ga and various metal electrodes. This study investigated the phase transformation kinetics and microstructural evolution in the Ni/Ga couple. The di...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-05-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/15/6/520 |
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| Summary: | In order to apply Ga alloys to flexible and wearable electronic devices, it is crucial to verify the mechanical reliability of interconnections between Ga and various metal electrodes. This study investigated the phase transformation kinetics and microstructural evolution in the Ni/Ga couple. The diffusion reaction behavior between nickel and gallium was characterized from 323 K to 623 K for different annealing times. At temperatures lower than 323 K, no obvious intermetallic compound was identified after annealing, according to SEM observation. For reactions at temperatures higher than 423 K, the Ni<sub>3</sub>Ga<sub>7</sub> phase was identified as the only reaction product formed, occurring in a planar morphology along the Ni/Ga interface. The activation energy for the growth of Ni<sub>3</sub>Ga<sub>7</sub> was determined as 58.58 kJ/mol. The kinetic equation expressing the relationship between the thickness of interfacial intermetallic compound, annealing temperature, and time, is the following: <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>d</mi><mo>=</mo><mn>417174.55</mn><mrow><mrow><mi mathvariant="normal">exp</mi></mrow><mo></mo><mrow><mfenced separators="|"><mrow><mo>−</mo><mstyle scriptlevel="0" displaystyle="true"><mfrac><mrow><mn>58579</mn></mrow><mrow><mi>R</mi><mi>T</mi></mrow></mfrac></mstyle></mrow></mfenced><msup><mrow><mi>t</mi></mrow><mrow><mn>2.04</mn><mo>−</mo><mn>0.0024</mn><mi>T</mi></mrow></msup></mrow></mrow></mrow></semantics></math></inline-formula>. |
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| ISSN: | 2073-4352 |