Study the electrical properties of ZnOSiO2 detector prepared by free rappid thermal oxidation
Zinc thin films deposited on (n-type)silicon at 510o C with oxidation times (10,20,30,35) sec have been oxidized. Zinc have been deposited by thermal diffusion method using heater instead of conventional furnace .It is found that we can get zinc oxide with outoxegen and closed farneces rapidly. The...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Tikrit University
2023-01-01
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| Series: | Tikrit Journal of Pure Science |
| Subjects: | |
| Online Access: | https://tjpsj.org/index.php/tjps/article/view/744 |
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