Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring
Abstract The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved. Therefore, this article proposes a real‐time reliability evaluation method of the multi...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-11-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12806 |
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| _version_ | 1850062288120184832 |
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| author | Zhonghao Dongye Wuyu Zhang Lei Qi Bowen Gu Hong Shen Xiangyu Zhang Xiang Cui |
| author_facet | Zhonghao Dongye Wuyu Zhang Lei Qi Bowen Gu Hong Shen Xiangyu Zhang Xiang Cui |
| author_sort | Zhonghao Dongye |
| collection | DOAJ |
| description | Abstract The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved. Therefore, this article proposes a real‐time reliability evaluation method of the multi‐state IGBT module in MMC through iterative calculation of the Markov chain model. The degradation process of the IGBT module is divided into multiple states based on the monitored bond wire failure, and the failure rate of the IGBT module is updated in real time using the accumulated monitoring data of junction temperature. The proposed method can more accurately reflect the real state of MMC compared with the binary state evaluation method. Besides, a multi‐channel high‐speed data acquisition board is designed to measuring the gate voltage and collector voltage of the IGBT for the health evaluation of IGBT modules in MMC; the typically measured results validate the effectiveness of the data acquisition board. |
| format | Article |
| id | doaj-art-3de0230d8e3543bdbb410c2ac5b30fd8 |
| institution | DOAJ |
| issn | 1755-4535 1755-4543 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Power Electronics |
| spelling | doaj-art-3de0230d8e3543bdbb410c2ac5b30fd82025-08-20T02:49:59ZengWileyIET Power Electronics1755-45351755-45432024-11-0117152561257110.1049/pel2.12806Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoringZhonghao Dongye0Wuyu Zhang1Lei Qi2Bowen Gu3Hong Shen4Xiangyu Zhang5Xiang Cui6School of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaAbstract The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved. Therefore, this article proposes a real‐time reliability evaluation method of the multi‐state IGBT module in MMC through iterative calculation of the Markov chain model. The degradation process of the IGBT module is divided into multiple states based on the monitored bond wire failure, and the failure rate of the IGBT module is updated in real time using the accumulated monitoring data of junction temperature. The proposed method can more accurately reflect the real state of MMC compared with the binary state evaluation method. Besides, a multi‐channel high‐speed data acquisition board is designed to measuring the gate voltage and collector voltage of the IGBT for the health evaluation of IGBT modules in MMC; the typically measured results validate the effectiveness of the data acquisition board.https://doi.org/10.1049/pel2.12806DC power transmissionsemiconductor devices |
| spellingShingle | Zhonghao Dongye Wuyu Zhang Lei Qi Bowen Gu Hong Shen Xiangyu Zhang Xiang Cui Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring IET Power Electronics DC power transmission semiconductor devices |
| title | Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring |
| title_full | Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring |
| title_fullStr | Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring |
| title_full_unstemmed | Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring |
| title_short | Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring |
| title_sort | real time reliability evaluation method for igbt module in mmc based on junction temperature and bond wire failure online monitoring |
| topic | DC power transmission semiconductor devices |
| url | https://doi.org/10.1049/pel2.12806 |
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