Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring

Abstract The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved. Therefore, this article proposes a real‐time reliability evaluation method of the multi...

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Main Authors: Zhonghao Dongye, Wuyu Zhang, Lei Qi, Bowen Gu, Hong Shen, Xiangyu Zhang, Xiang Cui
Format: Article
Language:English
Published: Wiley 2024-11-01
Series:IET Power Electronics
Subjects:
Online Access:https://doi.org/10.1049/pel2.12806
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author Zhonghao Dongye
Wuyu Zhang
Lei Qi
Bowen Gu
Hong Shen
Xiangyu Zhang
Xiang Cui
author_facet Zhonghao Dongye
Wuyu Zhang
Lei Qi
Bowen Gu
Hong Shen
Xiangyu Zhang
Xiang Cui
author_sort Zhonghao Dongye
collection DOAJ
description Abstract The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved. Therefore, this article proposes a real‐time reliability evaluation method of the multi‐state IGBT module in MMC through iterative calculation of the Markov chain model. The degradation process of the IGBT module is divided into multiple states based on the monitored bond wire failure, and the failure rate of the IGBT module is updated in real time using the accumulated monitoring data of junction temperature. The proposed method can more accurately reflect the real state of MMC compared with the binary state evaluation method. Besides, a multi‐channel high‐speed data acquisition board is designed to measuring the gate voltage and collector voltage of the IGBT for the health evaluation of IGBT modules in MMC; the typically measured results validate the effectiveness of the data acquisition board.
format Article
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institution DOAJ
issn 1755-4535
1755-4543
language English
publishDate 2024-11-01
publisher Wiley
record_format Article
series IET Power Electronics
spelling doaj-art-3de0230d8e3543bdbb410c2ac5b30fd82025-08-20T02:49:59ZengWileyIET Power Electronics1755-45351755-45432024-11-0117152561257110.1049/pel2.12806Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoringZhonghao Dongye0Wuyu Zhang1Lei Qi2Bowen Gu3Hong Shen4Xiangyu Zhang5Xiang Cui6School of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaSchool of Electrical and Electronic Engineering North China Electric Power University Beijing ChinaAbstract The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved. Therefore, this article proposes a real‐time reliability evaluation method of the multi‐state IGBT module in MMC through iterative calculation of the Markov chain model. The degradation process of the IGBT module is divided into multiple states based on the monitored bond wire failure, and the failure rate of the IGBT module is updated in real time using the accumulated monitoring data of junction temperature. The proposed method can more accurately reflect the real state of MMC compared with the binary state evaluation method. Besides, a multi‐channel high‐speed data acquisition board is designed to measuring the gate voltage and collector voltage of the IGBT for the health evaluation of IGBT modules in MMC; the typically measured results validate the effectiveness of the data acquisition board.https://doi.org/10.1049/pel2.12806DC power transmissionsemiconductor devices
spellingShingle Zhonghao Dongye
Wuyu Zhang
Lei Qi
Bowen Gu
Hong Shen
Xiangyu Zhang
Xiang Cui
Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring
IET Power Electronics
DC power transmission
semiconductor devices
title Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring
title_full Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring
title_fullStr Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring
title_full_unstemmed Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring
title_short Real‐time reliability evaluation method for IGBT module in MMC based on junction temperature and bond wire failure online monitoring
title_sort real time reliability evaluation method for igbt module in mmc based on junction temperature and bond wire failure online monitoring
topic DC power transmission
semiconductor devices
url https://doi.org/10.1049/pel2.12806
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