Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2

Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2

Abstract Substitutionally doped transition metal dichalcogenides (TMDs) are essential for advancing TMD‐based field effect transistors, sensors, and quantum photonic devices. However, the impact of local dopant concentrations and dopant–dopant interactions on charge doping and defect formation withi...

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Bibliographic Details
Main Authors: Kyle T. Munson, Riccardo Torsi, Fatimah Habis, Lysander Huberich, Yu‐Chuan Lin, Yue Yuan, Ke Wang, Bruno Schuler, Yuanxi Wang, John B. Asbury, Joshua A. Robinson
Format: Article
Language:English
Published: Wiley-VCH 2025-03-01
Series:Advanced Electronic Materials
Subjects:
2D materials
defects
doping
TMDs
Online Access:https://doi.org/10.1002/aelm.202400403
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https://doi.org/10.1002/aelm.202400403

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