Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
Abstract Substitutionally doped transition metal dichalcogenides (TMDs) are essential for advancing TMD‐based field effect transistors, sensors, and quantum photonic devices. However, the impact of local dopant concentrations and dopant–dopant interactions on charge doping and defect formation withi...
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Wiley-VCH
2025-03-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400403 |
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| author | Kyle T. Munson Riccardo Torsi Fatimah Habis Lysander Huberich Yu‐Chuan Lin Yue Yuan Ke Wang Bruno Schuler Yuanxi Wang John B. Asbury Joshua A. Robinson |
| author_facet | Kyle T. Munson Riccardo Torsi Fatimah Habis Lysander Huberich Yu‐Chuan Lin Yue Yuan Ke Wang Bruno Schuler Yuanxi Wang John B. Asbury Joshua A. Robinson |
| author_sort | Kyle T. Munson |
| collection | DOAJ |
| description | Abstract Substitutionally doped transition metal dichalcogenides (TMDs) are essential for advancing TMD‐based field effect transistors, sensors, and quantum photonic devices. However, the impact of local dopant concentrations and dopant–dopant interactions on charge doping and defect formation within TMDs remains underexplored. Here, a breakthrough understanding of the influence of rhenium (Re) concentration is presented on charge doping and defect formation in MoS2 monolayers grown by metal–organic chemical vapor deposition (MOCVD). It is shown that Re‐MoS2 films exhibit reduced sulfur‐site defects, consistent with prior reports. However, as the Re concentration approaches ⪆2 atom%, significant clustering of Re in the MoS2 is observed. Ab Initio calculations indicate that the transition from isolated Re atoms to Re clusters increases the ionization energy of Re dopants, thereby reducing Re‐doping efficacy. Using photoluminescence (PL) spectroscopy, it is shown that Re dopant clustering creates defect states that trap photogenerated excitons within the MoS2 lattice, resulting in broad sub‐gap emission. These results provide critical insights into how the local concentration of metal dopants influences carrier density, defect formation, and exciton recombination in TMDs, offering a novel framework for designing future TMD‐based devices with improved electronic and photonic properties. |
| format | Article |
| id | doaj-art-3dbcd1c77f2c47bd8ae980201ce27bb7 |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-3dbcd1c77f2c47bd8ae980201ce27bb72025-08-20T02:58:37ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-03-01113n/an/a10.1002/aelm.202400403Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2Kyle T. Munson0Riccardo Torsi1Fatimah Habis2Lysander Huberich3Yu‐Chuan Lin4Yue Yuan5Ke Wang6Bruno Schuler7Yuanxi Wang8John B. Asbury9Joshua A. Robinson10Department of Materials Science and Engineering The Pennsylvania State University University Park PA 16802 USADepartment of Materials Science and Engineering The Pennsylvania State University University Park PA 16802 USADepartment of Physics University of North Texas Denton TX 76203 USAnanotech@surfaces Laboratory Empa‐Swiss Federal Laboratories for Materials Science and Technology Dübendorf 8600 SwitzerlandDepartment of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu City 300 TaiwanDepartment of Chemistry The Pennsylvania State University University Park PA 16802 USAMaterials Research Institute The Pennsylvania State University University Park PA 16802 USAnanotech@surfaces Laboratory Empa‐Swiss Federal Laboratories for Materials Science and Technology Dübendorf 8600 SwitzerlandDepartment of Physics University of North Texas Denton TX 76203 USADepartment of Materials Science and Engineering The Pennsylvania State University University Park PA 16802 USADepartment of Materials Science and Engineering The Pennsylvania State University University Park PA 16802 USAAbstract Substitutionally doped transition metal dichalcogenides (TMDs) are essential for advancing TMD‐based field effect transistors, sensors, and quantum photonic devices. However, the impact of local dopant concentrations and dopant–dopant interactions on charge doping and defect formation within TMDs remains underexplored. Here, a breakthrough understanding of the influence of rhenium (Re) concentration is presented on charge doping and defect formation in MoS2 monolayers grown by metal–organic chemical vapor deposition (MOCVD). It is shown that Re‐MoS2 films exhibit reduced sulfur‐site defects, consistent with prior reports. However, as the Re concentration approaches ⪆2 atom%, significant clustering of Re in the MoS2 is observed. Ab Initio calculations indicate that the transition from isolated Re atoms to Re clusters increases the ionization energy of Re dopants, thereby reducing Re‐doping efficacy. Using photoluminescence (PL) spectroscopy, it is shown that Re dopant clustering creates defect states that trap photogenerated excitons within the MoS2 lattice, resulting in broad sub‐gap emission. These results provide critical insights into how the local concentration of metal dopants influences carrier density, defect formation, and exciton recombination in TMDs, offering a novel framework for designing future TMD‐based devices with improved electronic and photonic properties.https://doi.org/10.1002/aelm.2024004032D materialsdefectsdopingTMDs |
| spellingShingle | Kyle T. Munson Riccardo Torsi Fatimah Habis Lysander Huberich Yu‐Chuan Lin Yue Yuan Ke Wang Bruno Schuler Yuanxi Wang John B. Asbury Joshua A. Robinson Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2 Advanced Electronic Materials 2D materials defects doping TMDs |
| title | Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2 |
| title_full | Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2 |
| title_fullStr | Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2 |
| title_full_unstemmed | Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2 |
| title_short | Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2 |
| title_sort | influence of rhenium concentration on charge doping and defect formation in mos2 |
| topic | 2D materials defects doping TMDs |
| url | https://doi.org/10.1002/aelm.202400403 |
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