High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module
We present a novel instrument for fast-gated operation of a 50 μm CMOS SPAD (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diode), driven by an integrated fast-gated active quenching circuit with transition times faster than 300 ps (20–80%). The ins...
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IEEE
2020-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/9169781/ |
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| author | Marco Renna Alessandro Ruggeri Mirko Sanzaro Federica Villa Franco Zappa Alberto Tosi |
| author_facet | Marco Renna Alessandro Ruggeri Mirko Sanzaro Federica Villa Franco Zappa Alberto Tosi |
| author_sort | Marco Renna |
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| description | We present a novel instrument for fast-gated operation of a 50 μm CMOS SPAD (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diode), driven by an integrated fast-gated active quenching circuit with transition times faster than 300 ps (20–80%). The instrument is based on a custom system-in-package where the SPAD and its driving electronics are housed in a TO-8 package. The detector can be operated at repetition rates up to 160 MHz, with gate on-times as short as 500 ps, always guaranteeing a temporal response with 60 ps (FWHM) timing jitter and short exponential decay (53 ps time-constant). A dark-count rate as low as 1 cps is achieved operating the CMOS SPAD at 5 V above breakdown at a temperature of 263 K, still keeping the afterpulsing probability lower than 2%, with only 50 ns hold-off time, thanks to the fast-gating driving electronics. The instrument is housed in a compact 5 × 4 × 8 cm<sup>3</sup> case and can be triggered by either an external or internal source. A USB link allows to adjust measurement parameters, SPAD bias voltage and operating temperature. The high re-configurability of the instrument and its state-of-the-art performance make it suitable for applications where high detection rates and low timing jitter are required. |
| format | Article |
| id | doaj-art-3d80d06cd0a94dd69f7db65d6bc9a7bf |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2020-01-01 |
| publisher | IEEE |
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| spelling | doaj-art-3d80d06cd0a94dd69f7db65d6bc9a7bf2025-08-20T03:30:52ZengIEEEIEEE Photonics Journal1943-06552020-01-0112511210.1109/JPHOT.2020.30170929169781High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode ModuleMarco Renna0https://orcid.org/0000-0002-6642-7360Alessandro Ruggeri1https://orcid.org/0000-0002-3702-524XMirko Sanzaro2https://orcid.org/0000-0001-7522-9959Federica Villa3https://orcid.org/0000-0002-9840-0269Franco Zappa4https://orcid.org/0000-0003-1715-501XAlberto Tosi5https://orcid.org/0000-0003-1210-2875Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milano, ItalyWe present a novel instrument for fast-gated operation of a 50 μm CMOS SPAD (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diode), driven by an integrated fast-gated active quenching circuit with transition times faster than 300 ps (20–80%). The instrument is based on a custom system-in-package where the SPAD and its driving electronics are housed in a TO-8 package. The detector can be operated at repetition rates up to 160 MHz, with gate on-times as short as 500 ps, always guaranteeing a temporal response with 60 ps (FWHM) timing jitter and short exponential decay (53 ps time-constant). A dark-count rate as low as 1 cps is achieved operating the CMOS SPAD at 5 V above breakdown at a temperature of 263 K, still keeping the afterpulsing probability lower than 2%, with only 50 ns hold-off time, thanks to the fast-gating driving electronics. The instrument is housed in a compact 5 × 4 × 8 cm<sup>3</sup> case and can be triggered by either an external or internal source. A USB link allows to adjust measurement parameters, SPAD bias voltage and operating temperature. The high re-configurability of the instrument and its state-of-the-art performance make it suitable for applications where high detection rates and low timing jitter are required.https://ieeexplore.ieee.org/document/9169781/Single-photonfast-gatedSPADafterpulsingquantum key distributionquantum communication |
| spellingShingle | Marco Renna Alessandro Ruggeri Mirko Sanzaro Federica Villa Franco Zappa Alberto Tosi High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module IEEE Photonics Journal Single-photon fast-gated SPAD afterpulsing quantum key distribution quantum communication |
| title | High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module |
| title_full | High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module |
| title_fullStr | High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module |
| title_full_unstemmed | High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module |
| title_short | High Detection Rate Fast-Gated CMOS Single-Photon Avalanche Diode Module |
| title_sort | high detection rate fast gated cmos single photon avalanche diode module |
| topic | Single-photon fast-gated SPAD afterpulsing quantum key distribution quantum communication |
| url | https://ieeexplore.ieee.org/document/9169781/ |
| work_keys_str_mv | AT marcorenna highdetectionratefastgatedcmossinglephotonavalanchediodemodule AT alessandroruggeri highdetectionratefastgatedcmossinglephotonavalanchediodemodule AT mirkosanzaro highdetectionratefastgatedcmossinglephotonavalanchediodemodule AT federicavilla highdetectionratefastgatedcmossinglephotonavalanchediodemodule AT francozappa highdetectionratefastgatedcmossinglephotonavalanchediodemodule AT albertotosi highdetectionratefastgatedcmossinglephotonavalanchediodemodule |