Iodine-assisted ultrafast growth of high-quality monolayer MoS<sub>2</sub> with sulfur-terminated edges

Iodine-assisted ultrafast growth of high-quality monolayer MoS<sub>2</sub> with sulfur-terminated edges

Two-dimensional (2D) semiconductors have attracted great attention to extend Moore’s law, which motivates the quest for fast growth of high-quality materials. However, taking MoS<sub>2</sub> as an example, current methods yield 2D MoS<sub>2</sub> with a low growth rate and po...

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Main Authors: Wu Qinke, Zhang Jialiang, Tang Lei, Khan Usman, Nong Huiyu, Zhao Shilong, Sun Yujie, Zheng Rongxu, Zhang Rongjie, Wang Jingwei, Tan Junyang, Yu Qiangmin, He Liqiong, Li Shisheng, Zou Xiaolong, Cheng Hui-Ming, Liu Bilu
Format: Article
Language:English
Published: Science Press 2023-06-01
Series:National Science Open
Subjects:
2D semiconductors
molybdenum disulfides
ultrafast growth
defect density
sulfur vacancy
iodine-assisted
sulfur-terminated edge
Online Access:https://www.sciengine.com/doi/10.1360/nso/20230009
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Summary:Two-dimensional (2D) semiconductors have attracted great attention to extend Moore’s law, which motivates the quest for fast growth of high-quality materials. However, taking MoS<sub>2</sub> as an example, current methods yield 2D MoS<sub>2</sub> with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial semiconductors. Here, we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS<sub>2</sub>. The grown MoS<sub>2</sub> has the lowest density of sulfur vacancies (~1.41×<sc>10<sup>12</sup> cm<sup>−2</sup>)</sc> reported so far and excellent electrical properties with high on/off current ratios of 10<sup>8</sup> and carrier mobility of <sc>175 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>.</sc> Theoretical calculations show that by incorporating iodine, the nucleation barrier of MoS<sub>2</sub> growth with sulfur-terminated edges reduces dramatically. The sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS<sub>2</sub> domains within seconds. This work provides an effective method for the ultrafast growth of 2D semiconductors with high quality, which will promote their applications.
ISSN:2097-1168

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