Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer
Spin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies. In this study, we successfully demonstrate highly efficient SOT magnetization...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-04-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0248007 |
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| author | Miao Jiang Xinyuan Yang Yitao Yu Shinobu Ohya Masaaki Tanaka |
| author_facet | Miao Jiang Xinyuan Yang Yitao Yu Shinobu Ohya Masaaki Tanaka |
| author_sort | Miao Jiang |
| collection | DOAJ |
| description | Spin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies. In this study, we successfully demonstrate highly efficient SOT magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer, achieved without the assistance of an external magnetic field. To further investigate the underlying physical mechanisms, we employed micromagnetic simulations incorporating the Dzyaloshinskii–Moriya interaction, known for breaking the in-plane symmetry in SOT magnetization switching. Our findings indicate that the Dzyaloshinskii–Moriya interaction (DMI) plays a crucial role in enabling field-free spin–orbit torque (SOT) magnetization switching in the (Ga,Mn)As layer. Furthermore, we found that the direction of the DM effective field is determined by the initial magnetization states, leading to varying polarities of SOT magnetization switching. This work deepens our understanding of field-free magnetization switching mechanisms and paves the way for developing highly efficient SOT-based devices. |
| format | Article |
| id | doaj-art-3d11c041b5dc4b538019cd3e8e75922c |
| institution | DOAJ |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-04-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-3d11c041b5dc4b538019cd3e8e75922c2025-08-20T03:11:02ZengAIP Publishing LLCAPL Materials2166-532X2025-04-01134041106041106-610.1063/5.0248007Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layerMiao Jiang0Xinyuan Yang1Yitao Yu2Shinobu Ohya3Masaaki Tanaka4School of Materials Science and Engineering, Beijing Institute of Technology, Haidian, Beijing 100081, People’s Republic of ChinaDepartment of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, JapanSchool of Materials Science and Engineering, Beijing Institute of Technology, Haidian, Beijing 100081, People’s Republic of ChinaDepartment of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, JapanDepartment of Electrical Engineering and Information Systems, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, JapanSpin–orbit torque (SOT) provides an efficient electrical means of magnetization switching in magnetic materials, presenting a significant potential for advancing next-generation information storage and memory technologies. In this study, we successfully demonstrate highly efficient SOT magnetization switching in a perpendicularly magnetized (Ga,Mn)As single layer, achieved without the assistance of an external magnetic field. To further investigate the underlying physical mechanisms, we employed micromagnetic simulations incorporating the Dzyaloshinskii–Moriya interaction, known for breaking the in-plane symmetry in SOT magnetization switching. Our findings indicate that the Dzyaloshinskii–Moriya interaction (DMI) plays a crucial role in enabling field-free spin–orbit torque (SOT) magnetization switching in the (Ga,Mn)As layer. Furthermore, we found that the direction of the DM effective field is determined by the initial magnetization states, leading to varying polarities of SOT magnetization switching. This work deepens our understanding of field-free magnetization switching mechanisms and paves the way for developing highly efficient SOT-based devices.http://dx.doi.org/10.1063/5.0248007 |
| spellingShingle | Miao Jiang Xinyuan Yang Yitao Yu Shinobu Ohya Masaaki Tanaka Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer APL Materials |
| title | Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer |
| title_full | Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer |
| title_fullStr | Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer |
| title_full_unstemmed | Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer |
| title_short | Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer |
| title_sort | micromagnetic simulations for magnetic field free magnetization switching by spin orbit torque in a perpendicularly magnetized ga mn as single layer |
| url | http://dx.doi.org/10.1063/5.0248007 |
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