Design and performance of GaSb-based quantum cascade detectors
InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m 0, enhancing the optical transition strength, and a high condu...
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| Format: | Article |
| Language: | English |
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De Gruyter
2024-01-01
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| Series: | Nanophotonics |
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| Online Access: | https://doi.org/10.1515/nanoph-2023-0702 |
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| _version_ | 1850159213762838528 |
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| author | Giparakis Miriam Windischhofer Andreas Isceri Stefania Schrenk Werner Schwarz Benedikt Strasser Gottfried Andrews Aaron Maxwell |
| author_facet | Giparakis Miriam Windischhofer Andreas Isceri Stefania Schrenk Werner Schwarz Benedikt Strasser Gottfried Andrews Aaron Maxwell |
| author_sort | Giparakis Miriam |
| collection | DOAJ |
| description | InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m
0, enhancing the optical transition strength, and a high conduction band offset of 2.28 eV, reducing the noise and allowing for high optical transition energies. InAs and AlSb strain balance each other on GaSb with an InAs:AlSb ratio of 0.96:1. To regain the freedom of a lattice-matched material system regarding the optimization of a QCD design, submonolayer InSb layers are introduced. With strain engineering, four different active regions between 3.65 and 5.5 µm were designed with InAs:AlSb thickness ratios of up to 2.8:1, and subsequently grown and characterized. This includes an optimized QCD design at 4.3 µm, with a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 108 Jones. Additionally, all QCD designs exhibit higher-energy interband signals in the mid- to near-infrared, stemming from the InAs/AlSb type-II alignment and the narrow InAs band gap. |
| format | Article |
| id | doaj-art-3cdbc79c33e742d08730f751fb524d55 |
| institution | OA Journals |
| issn | 2192-8614 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj-art-3cdbc79c33e742d08730f751fb524d552025-08-20T02:23:36ZengDe GruyterNanophotonics2192-86142024-01-0113101773178010.1515/nanoph-2023-0702Design and performance of GaSb-based quantum cascade detectorsGiparakis Miriam0Windischhofer Andreas1Isceri Stefania2Schrenk Werner3Schwarz Benedikt4Strasser Gottfried5Andrews Aaron Maxwell6Institute of Solid State Electronics, TU Wien, Gußhausstraße 25, 1040Vienna, AustriaInstitute of Solid State Electronics, TU Wien, Gußhausstraße 25, 1040Vienna, AustriaInstitute of Solid State Electronics, TU Wien, Gußhausstraße 25, 1040Vienna, AustriaCenter for Micro- and Nanostructures, TU Wien, Gußhausstraße 25, 1040Vienna, AustriaInstitute of Solid State Electronics, TU Wien, Gußhausstraße 25, 1040Vienna, AustriaInstitute of Solid State Electronics, TU Wien, Gußhausstraße 25, 1040Vienna, AustriaInstitute of Solid State Electronics, TU Wien, Gußhausstraße 25, 1040Vienna, AustriaInAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m 0, enhancing the optical transition strength, and a high conduction band offset of 2.28 eV, reducing the noise and allowing for high optical transition energies. InAs and AlSb strain balance each other on GaSb with an InAs:AlSb ratio of 0.96:1. To regain the freedom of a lattice-matched material system regarding the optimization of a QCD design, submonolayer InSb layers are introduced. With strain engineering, four different active regions between 3.65 and 5.5 µm were designed with InAs:AlSb thickness ratios of up to 2.8:1, and subsequently grown and characterized. This includes an optimized QCD design at 4.3 µm, with a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 108 Jones. Additionally, all QCD designs exhibit higher-energy interband signals in the mid- to near-infrared, stemming from the InAs/AlSb type-II alignment and the narrow InAs band gap.https://doi.org/10.1515/nanoph-2023-0702quantum cascade detectormid-infrared detectionmolecular beam epitaxyiii–v semiconductorsinas/alsb on gasb |
| spellingShingle | Giparakis Miriam Windischhofer Andreas Isceri Stefania Schrenk Werner Schwarz Benedikt Strasser Gottfried Andrews Aaron Maxwell Design and performance of GaSb-based quantum cascade detectors Nanophotonics quantum cascade detector mid-infrared detection molecular beam epitaxy iii–v semiconductors inas/alsb on gasb |
| title | Design and performance of GaSb-based quantum cascade detectors |
| title_full | Design and performance of GaSb-based quantum cascade detectors |
| title_fullStr | Design and performance of GaSb-based quantum cascade detectors |
| title_full_unstemmed | Design and performance of GaSb-based quantum cascade detectors |
| title_short | Design and performance of GaSb-based quantum cascade detectors |
| title_sort | design and performance of gasb based quantum cascade detectors |
| topic | quantum cascade detector mid-infrared detection molecular beam epitaxy iii–v semiconductors inas/alsb on gasb |
| url | https://doi.org/10.1515/nanoph-2023-0702 |
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