Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts
This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the i...
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| Format: | Article |
| Language: | English |
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Universidade Federal de Viçosa (UFV)
2023-05-01
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| Series: | The Journal of Engineering and Exact Sciences |
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| Online Access: | https://periodicos.ufv.br/jcec/article/view/15855 |
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| author | Souad Benykrelef Sedik Mansouri Hicham Helal Abdelaziz Rabehi Abdelaziz Joti Zineb Benamara |
| author_facet | Souad Benykrelef Sedik Mansouri Hicham Helal Abdelaziz Rabehi Abdelaziz Joti Zineb Benamara |
| author_sort | Souad Benykrelef |
| collection | DOAJ |
| description |
This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature.
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| format | Article |
| id | doaj-art-3cc9299a0524429e9d4c7a7c39e7e87e |
| institution | Kabale University |
| issn | 2527-1075 |
| language | English |
| publishDate | 2023-05-01 |
| publisher | Universidade Federal de Viçosa (UFV) |
| record_format | Article |
| series | The Journal of Engineering and Exact Sciences |
| spelling | doaj-art-3cc9299a0524429e9d4c7a7c39e7e87e2025-02-02T19:55:12ZengUniversidade Federal de Viçosa (UFV)The Journal of Engineering and Exact Sciences2527-10752023-05-019410.18540/jcecvl9iss4pp15855-01eElectrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contactsSouad Benykrelef0Sedik Mansouri1Hicham Helal 2Abdelaziz Rabehi3Abdelaziz Joti 4Zineb Benamara 5Laboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, AlgeriaLaboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, AlgeriaLaboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, AlgeriaLaboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria Wireless and Wired Communication and Smart Systems Laboratory, Djelfa university of Algeria, Djelfa, 17000, AlgeriaLaboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, AlgeriaLaboratoire de Micro-électronique Appliquée, Université Djillali Liabés de Sidi Bel Abbés, BP 89, Sidi Bel Abbés, 22000, Algeria This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature. https://periodicos.ufv.br/jcec/article/view/15855n-GaAsnanowireSilvaco-AtlasSchottky diodeI–V characteristics |
| spellingShingle | Souad Benykrelef Sedik Mansouri Hicham Helal Abdelaziz Rabehi Abdelaziz Joti Zineb Benamara Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts The Journal of Engineering and Exact Sciences n-GaAs nanowire Silvaco-Atlas Schottky diode I–V characteristics |
| title | Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts |
| title_full | Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts |
| title_fullStr | Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts |
| title_full_unstemmed | Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts |
| title_short | Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts |
| title_sort | electrical behavior of n gaas schottky nanowire in wide temperature range for different contacts |
| topic | n-GaAs nanowire Silvaco-Atlas Schottky diode I–V characteristics |
| url | https://periodicos.ufv.br/jcec/article/view/15855 |
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