Electrical behavior of n-GaAs Schottky nanowire in wide temperature range for different contacts

This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the i...

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Bibliographic Details
Main Authors: Souad Benykrelef, Sedik Mansouri, Hicham Helal, Abdelaziz Rabehi, Abdelaziz Joti, Zineb Benamara
Format: Article
Language:English
Published: Universidade Federal de Viçosa (UFV) 2023-05-01
Series:The Journal of Engineering and Exact Sciences
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Online Access:https://periodicos.ufv.br/jcec/article/view/15855
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Summary:This research aims to study the impact of metal work function ?m on the I–V characteristics of a n-GaAs Schottky nanowire structure, using 3D Silvaco-Atlas software. The electrical characteristics have been performed in a wide temperature range of 300-550K. This allows us to study and discuss the influence of temperature and the metal work function ?m on the performance of our proposed device. The results show a great dependence between ?m and the electrical parameters. A decrease in current is observed with increasing ?m, as well as an increase in barrier height with increasing ?m and a decrease with increasing temperature.
ISSN:2527-1075