Self-Mode-Locking and Frequency-Modulated Comb Semiconductor Disk Lasers
Optically pumped semiconductor disk lasers—known as vertical-external-cavity surface-emitting lasers (VECSELs)—are promising devices for ultrashort pulse formation. For it, a “SESAM-free” approach labeled “self-mode-locking” received considerable attention in the past decade, relying solely on a chi...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-07-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/12/7/677 |
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| Summary: | Optically pumped semiconductor disk lasers—known as vertical-external-cavity surface-emitting lasers (VECSELs)—are promising devices for ultrashort pulse formation. For it, a “SESAM-free” approach labeled “self-mode-locking” received considerable attention in the past decade, relying solely on a chip-related nonlinear optical property which can establish adequate pulsing conditions—thereby suggesting a reduced reliance on a semiconductor saturable-absorber mirror (the SESAM) in the cavity. Self-mode-locked (SML) VECSELs with sub-ps pulse durations were reported repeatedly. This motivated investigations on a Kerr-lensing type effect acting as an artificial saturable absorber. So-called Z-scan and ultrafast beam-deflection experiments were conducted to emphasize the role of nonlinear lensing in the chip for pulse formation. Recently, in addition to allowing stable ultrashort pulsed operation, self-starting mode-locked operation gave rise to another emission regime related to frequency comb formation. While amplitude-modulated combs relate to signal peaks in time, providing a so-called pulse train, a frequency-modulated comb is understood to cause quasi continuous-wave output with its sweep of instantaneous frequency over the range of phase-locked modes. With gain-bandwidth-enhanced chips, as well as with an improved understanding of the impacts of dispersion and nonlinear lensing properties and cavity configurations on the device output, an enhanced employment of SML VECSELs is to be expected. |
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| ISSN: | 2304-6732 |