Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit
The continuous miniaturization of field-effect transistors (FETs) has propelled microprocessors to unprecedented levels of integration. However, further scaling encounters a critical trade-off between integration density and power efficiency. To transcend this limitation, a new class of steep-slope...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-09-01
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| Series: | Computational Materials Today |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2950463524000085 |
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| author | Weiming Zhang Jian Zhou Bing Wang Yuqi Sun Zhimei Sun |
| author_facet | Weiming Zhang Jian Zhou Bing Wang Yuqi Sun Zhimei Sun |
| author_sort | Weiming Zhang |
| collection | DOAJ |
| description | The continuous miniaturization of field-effect transistors (FETs) has propelled microprocessors to unprecedented levels of integration. However, further scaling encounters a critical trade-off between integration density and power efficiency. To transcend this limitation, a new class of steep-slope transistors has emerged, capable of surpassing the subthreshold swing (SS) limit but imposing stringent requirements on gate electrostatics. In this Perspective, we propose atomically-thin, one-dimensional (1D) materials as promising candidates for steep-slope switches. These materials offer distinct advantages in electrostatic integrity, crucial for overcoming traditional scaling bottlenecks. We delve into the underlying operational mechanisms to elucidate design methodologies and optimization strategies for 1D steep-slope transistors. We anticipate that by engineering the density of states distribution and carrier injection mechanisms, these transistors will achieve unparalleled performance and energy efficiency, representing a new frontier in device scaling. Our insights seek to facilitate future research and development in this transformative area of semiconductor technology. |
| format | Article |
| id | doaj-art-3cb6b829fec04155b2216e964065d03f |
| institution | Kabale University |
| issn | 2950-4635 |
| language | English |
| publishDate | 2024-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Computational Materials Today |
| spelling | doaj-art-3cb6b829fec04155b2216e964065d03f2025-08-20T03:42:40ZengElsevierComputational Materials Today2950-46352024-09-01210000810.1016/j.commt.2024.100008Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limitWeiming Zhang0Jian Zhou1Bing Wang2Yuqi Sun3Zhimei Sun4School of Materials Science and Engineering, Beihang University, Beijing 100191, ChinaSchool of Materials Science and Engineering, Beihang University, Beijing 100191, ChinaSchool of Materials Science and Engineering, Beihang University, Beijing 100191, ChinaSchool of Materials Science and Engineering, Beihang University, Beijing 100191, ChinaCorresponding author.; School of Materials Science and Engineering, Beihang University, Beijing 100191, ChinaThe continuous miniaturization of field-effect transistors (FETs) has propelled microprocessors to unprecedented levels of integration. However, further scaling encounters a critical trade-off between integration density and power efficiency. To transcend this limitation, a new class of steep-slope transistors has emerged, capable of surpassing the subthreshold swing (SS) limit but imposing stringent requirements on gate electrostatics. In this Perspective, we propose atomically-thin, one-dimensional (1D) materials as promising candidates for steep-slope switches. These materials offer distinct advantages in electrostatic integrity, crucial for overcoming traditional scaling bottlenecks. We delve into the underlying operational mechanisms to elucidate design methodologies and optimization strategies for 1D steep-slope transistors. We anticipate that by engineering the density of states distribution and carrier injection mechanisms, these transistors will achieve unparalleled performance and energy efficiency, representing a new frontier in device scaling. Our insights seek to facilitate future research and development in this transformative area of semiconductor technology.http://www.sciencedirect.com/science/article/pii/S2950463524000085One-dimensionalField-effect transistorSubthreshold swingDensity of states engineeringInjection mechanism engineering |
| spellingShingle | Weiming Zhang Jian Zhou Bing Wang Yuqi Sun Zhimei Sun Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit Computational Materials Today One-dimensional Field-effect transistor Subthreshold swing Density of states engineering Injection mechanism engineering |
| title | Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit |
| title_full | Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit |
| title_fullStr | Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit |
| title_full_unstemmed | Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit |
| title_short | Ultimate-scaled one-dimensional transistors: Surpassing the subthreshold swing limit |
| title_sort | ultimate scaled one dimensional transistors surpassing the subthreshold swing limit |
| topic | One-dimensional Field-effect transistor Subthreshold swing Density of states engineering Injection mechanism engineering |
| url | http://www.sciencedirect.com/science/article/pii/S2950463524000085 |
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