Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights
Transition metal dichalcogenides, especially molybdenum disulfide (MoS<sub>2</sub>), exhibit exceptional properties that make them suitable for a wide range of applications. However, the interaction between MoS<sub>2</sub> and technologically relevant substrates, such as plat...
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2025-06-01
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| author | Cristian Tomasi Cebotari Christos Gatsios Andrea Pedrielli Lucia Nasi Francesca Rossi Andrea Chiappini Riccardo Ceccato Roberto Verucchi Marco V. Nardi Melanie Timpel |
| author_facet | Cristian Tomasi Cebotari Christos Gatsios Andrea Pedrielli Lucia Nasi Francesca Rossi Andrea Chiappini Riccardo Ceccato Roberto Verucchi Marco V. Nardi Melanie Timpel |
| author_sort | Cristian Tomasi Cebotari |
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| description | Transition metal dichalcogenides, especially molybdenum disulfide (MoS<sub>2</sub>), exhibit exceptional properties that make them suitable for a wide range of applications. However, the interaction between MoS<sub>2</sub> and technologically relevant substrates, such as platinum (Pt) electrodes, can significantly influence its properties. This study investigates the growth and properties of MoS<sub>2</sub> thin films on Pt substrates using ionized jet deposition, a versatile, low-cost vacuum deposition technique. We explore the effects of the roughness of Pt substrates and self-heating during deposition on the chemical composition, structure, and strain of MoS<sub>2</sub> films. By optimizing the deposition system to achieve crystalline MoS<sub>2</sub> at room temperature, we compare as-deposited and annealed films. The results reveal that as-deposited MoS<sub>2</sub> films are initially amorphous and conform to the Pt substrate roughness, but crystalline growth is reached when the sample holder is sufficiently heated by the plasma. Further post-annealing at 270 °C enhances crystallinity and reduces sulfur-related defects. We also identify a change in the MoS<sub>2</sub>–Pt interface properties, with a reduction in Pt–S interactions after annealing. Our findings contribute to the understanding of MoS<sub>2</sub> growth on Pt and provide insights for optimizing MoS<sub>2</sub>-based devices in catalysis and electronics. |
| format | Article |
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| institution | Kabale University |
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| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Surfaces |
| spelling | doaj-art-3c831e0912b04342ab5474e44e20d6ba2025-08-20T03:27:22ZengMDPI AGSurfaces2571-96372025-06-01823810.3390/surfaces8020038Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural InsightsCristian Tomasi Cebotari0Christos Gatsios1Andrea Pedrielli2Lucia Nasi3Francesca Rossi4Andrea Chiappini5Riccardo Ceccato6Roberto Verucchi7Marco V. Nardi8Melanie Timpel9IMEM-CNR Institute of Materials for Electronics and Magnetism, Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, 38123 Trento, ItalyIMEM-CNR Institute of Materials for Electronics and Magnetism, Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, 38123 Trento, ItalySensors and Devices Center, Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento, ItalyIMEM-CNR Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma, ItalyIMEM-CNR Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma, ItalyIFN-CNR, CSMFO Lab & FBK Photonics Unit, Via alla Cascata 56/C, Povo, 38123 Trento, ItalyDepartment of Industrial Engineering, University of Trento, Via Sommarive 9, 38123 Trento, ItalyIMEM-CNR Institute of Materials for Electronics and Magnetism, Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, 38123 Trento, ItalyIMEM-CNR Institute of Materials for Electronics and Magnetism, Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, 38123 Trento, ItalyIMEM-CNR Institute of Materials for Electronics and Magnetism, Trento Unit c/o Fondazione Bruno Kessler, Via alla Cascata 56/C, 38123 Trento, ItalyTransition metal dichalcogenides, especially molybdenum disulfide (MoS<sub>2</sub>), exhibit exceptional properties that make them suitable for a wide range of applications. However, the interaction between MoS<sub>2</sub> and technologically relevant substrates, such as platinum (Pt) electrodes, can significantly influence its properties. This study investigates the growth and properties of MoS<sub>2</sub> thin films on Pt substrates using ionized jet deposition, a versatile, low-cost vacuum deposition technique. We explore the effects of the roughness of Pt substrates and self-heating during deposition on the chemical composition, structure, and strain of MoS<sub>2</sub> films. By optimizing the deposition system to achieve crystalline MoS<sub>2</sub> at room temperature, we compare as-deposited and annealed films. The results reveal that as-deposited MoS<sub>2</sub> films are initially amorphous and conform to the Pt substrate roughness, but crystalline growth is reached when the sample holder is sufficiently heated by the plasma. Further post-annealing at 270 °C enhances crystallinity and reduces sulfur-related defects. We also identify a change in the MoS<sub>2</sub>–Pt interface properties, with a reduction in Pt–S interactions after annealing. Our findings contribute to the understanding of MoS<sub>2</sub> growth on Pt and provide insights for optimizing MoS<sub>2</sub>-based devices in catalysis and electronics.https://www.mdpi.com/2571-9637/8/2/38transition metal dichalcogenidesplatinumionized jet depositioninterfacephotoelectron spectroscopyelectronic properties |
| spellingShingle | Cristian Tomasi Cebotari Christos Gatsios Andrea Pedrielli Lucia Nasi Francesca Rossi Andrea Chiappini Riccardo Ceccato Roberto Verucchi Marco V. Nardi Melanie Timpel Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights Surfaces transition metal dichalcogenides platinum ionized jet deposition interface photoelectron spectroscopy electronic properties |
| title | Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights |
| title_full | Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights |
| title_fullStr | Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights |
| title_full_unstemmed | Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights |
| title_short | Optimizing Crystalline MoS<sub>2</sub> Growth on Technologically Relevant Platinum Substrates Using Ionized Jet Deposition: Interface Interactions and Structural Insights |
| title_sort | optimizing crystalline mos sub 2 sub growth on technologically relevant platinum substrates using ionized jet deposition interface interactions and structural insights |
| topic | transition metal dichalcogenides platinum ionized jet deposition interface photoelectron spectroscopy electronic properties |
| url | https://www.mdpi.com/2571-9637/8/2/38 |
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