Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals Ferromagnet
Abstract The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facili...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-04-01
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| Series: | Advanced Materials Interfaces |
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| Online Access: | https://doi.org/10.1002/admi.202400678 |
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| author | Mayank Sharma Garen Avedissian Witold Skowroński Junhyeon Jo Andrey Chuvilin Fèlix Casanova Marco Gobbi Luis E. Hueso |
| author_facet | Mayank Sharma Garen Avedissian Witold Skowroński Junhyeon Jo Andrey Chuvilin Fèlix Casanova Marco Gobbi Luis E. Hueso |
| author_sort | Mayank Sharma |
| collection | DOAJ |
| description | Abstract The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all‐van der Waals FGT/O‐FGT/hBN heterostructure is demonstrated. The antiferromagnetic O‐FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage‐controlled magnetization switching, highlighting the potential of FGT‐based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high‐performance magnetic devices. |
| format | Article |
| id | doaj-art-3bc98f6850904964a3969f4b89ff63dc |
| institution | OA Journals |
| issn | 2196-7350 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Wiley-VCH |
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| series | Advanced Materials Interfaces |
| spelling | doaj-art-3bc98f6850904964a3969f4b89ff63dc2025-08-20T02:27:18ZengWiley-VCHAdvanced Materials Interfaces2196-73502025-04-01128n/an/a10.1002/admi.202400678Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals FerromagnetMayank Sharma0Garen Avedissian1Witold Skowroński2Junhyeon Jo3Andrey Chuvilin4Fèlix Casanova5Marco Gobbi6Luis E. Hueso7CIC nanoGUNE BRTA Donostia‐San Sebastian 20018 Basque Country SpainCIC nanoGUNE BRTA Donostia‐San Sebastian 20018 Basque Country SpainInstitute of Electronics AGH University of Krakow Al. Mickiewicza 30 Kraków 30–059 PolandCIC nanoGUNE BRTA Donostia‐San Sebastian 20018 Basque Country SpainCIC nanoGUNE BRTA Donostia‐San Sebastian 20018 Basque Country SpainCIC nanoGUNE BRTA Donostia‐San Sebastian 20018 Basque Country SpainCIC nanoGUNE BRTA Donostia‐San Sebastian 20018 Basque Country SpainCIC nanoGUNE BRTA Donostia‐San Sebastian 20018 Basque Country SpainAbstract The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all‐van der Waals FGT/O‐FGT/hBN heterostructure is demonstrated. The antiferromagnetic O‐FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage‐controlled magnetization switching, highlighting the potential of FGT‐based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high‐performance magnetic devices.https://doi.org/10.1002/admi.2024006782D magnetsexchange biasFe3GeTe2magnetic switchingvoltage control |
| spellingShingle | Mayank Sharma Garen Avedissian Witold Skowroński Junhyeon Jo Andrey Chuvilin Fèlix Casanova Marco Gobbi Luis E. Hueso Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals Ferromagnet Advanced Materials Interfaces 2D magnets exchange bias Fe3GeTe2 magnetic switching voltage control |
| title | Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals Ferromagnet |
| title_full | Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals Ferromagnet |
| title_fullStr | Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals Ferromagnet |
| title_full_unstemmed | Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals Ferromagnet |
| title_short | Gate‐Tunable Exchange Bias and Voltage‐Controlled Magnetization Switching in a van der Waals Ferromagnet |
| title_sort | gate tunable exchange bias and voltage controlled magnetization switching in a van der waals ferromagnet |
| topic | 2D magnets exchange bias Fe3GeTe2 magnetic switching voltage control |
| url | https://doi.org/10.1002/admi.202400678 |
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