Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors
In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters by means of an original automatic noise figure measuring system only. Measurements have been perform...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1994-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1994/38702 |
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