Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors
In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters by means of an original automatic noise figure measuring system only. Measurements have been perform...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1994-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1994/38702 |
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| _version_ | 1849304956018884608 |
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| author | A. Caddemi M. Sannino |
| author_facet | A. Caddemi M. Sannino |
| author_sort | A. Caddemi |
| collection | DOAJ |
| description | In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor
are presented. The device has been characterized in terms of noise and scattering parameters by means
of an original automatic noise figure measuring system only. Measurements have been performed over
the 1–4 GHz frequency range and at different bias conditions. The extracted model refers to the
performance of the chip device since the package and bond parasitics have been accurately de-embedded
by proper calibration techniques. |
| format | Article |
| id | doaj-art-3b6183535914414f85515cfdcd4dbd22 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1994-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-3b6183535914414f85515cfdcd4dbd222025-08-20T03:55:36ZengWileyActive and Passive Electronic Components0882-75161563-50311994-01-0117316717510.1155/1994/38702Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar TransistorsA. Caddemi0M. Sannino1Dipartimento di Ingegneria Elettrica, Università di Palermo, Laboratorio di Elettronica delle Microonde, Viale delle Scienze, Palermo 90128, ItalyDipartimento di Ingegneria Elettrica, Università di Palermo, Laboratorio di Elettronica delle Microonde, Viale delle Scienze, Palermo 90128, ItalyIn this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters by means of an original automatic noise figure measuring system only. Measurements have been performed over the 1–4 GHz frequency range and at different bias conditions. The extracted model refers to the performance of the chip device since the package and bond parasitics have been accurately de-embedded by proper calibration techniques.http://dx.doi.org/10.1155/1994/38702 |
| spellingShingle | A. Caddemi M. Sannino Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors Active and Passive Electronic Components |
| title | Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors |
| title_full | Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors |
| title_fullStr | Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors |
| title_full_unstemmed | Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors |
| title_short | Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors |
| title_sort | small signal and noise model determination for double polysilicon self aligned bipolar transistors |
| url | http://dx.doi.org/10.1155/1994/38702 |
| work_keys_str_mv | AT acaddemi smallsignalandnoisemodeldeterminationfordoublepolysiliconselfalignedbipolartransistors AT msannino smallsignalandnoisemodeldeterminationfordoublepolysiliconselfalignedbipolartransistors |