Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors
In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters by means of an original automatic noise figure measuring system only. Measurements have been perform...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1994-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1994/38702 |
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| Summary: | In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor
are presented. The device has been characterized in terms of noise and scattering parameters by means
of an original automatic noise figure measuring system only. Measurements have been performed over
the 1–4 GHz frequency range and at different bias conditions. The extracted model refers to the
performance of the chip device since the package and bond parasitics have been accurately de-embedded
by proper calibration techniques. |
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| ISSN: | 0882-7516 1563-5031 |