Strain-Compensated Quantum Well Asymmetric Waveguide Edge-Emitting Laser Operating at 730 nm
Semiconductor lasers operating at the 730 nm peak wavelength have diverse applications, including biomedical diagnostics, agricultural lighting, and high-precision sensing. However, quantum well (QW) materials, commonly employed at this wavelength, often fail to simultaneously meet the dual requirem...
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| Language: | English |
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MDPI AG
2025-02-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/25/4/1173 |
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| author | Lutai Fan Lijie Cao Peng Jia Qian Liu Baiheng Liu Haofei Chen Yongyi Chen Li Qin Lei Liang Yuxin Lei Cheng Qiu Yue Song Yubing Wang Yongqiang Ning Lijun Wang |
| author_facet | Lutai Fan Lijie Cao Peng Jia Qian Liu Baiheng Liu Haofei Chen Yongyi Chen Li Qin Lei Liang Yuxin Lei Cheng Qiu Yue Song Yubing Wang Yongqiang Ning Lijun Wang |
| author_sort | Lutai Fan |
| collection | DOAJ |
| description | Semiconductor lasers operating at the 730 nm peak wavelength have diverse applications, including biomedical diagnostics, agricultural lighting, and high-precision sensing. However, quantum well (QW) materials, commonly employed at this wavelength, often fail to simultaneously meet the dual requirements of lattice matching and bandgap alignment. In this study, GaAsP/AlGaInP large strain compensation QW with lattice mismatches of −7.533‰ and 1.112‰ was developed. Strain compensation was utilized to address the lattice mismatch while ensuring lasing action at 730 nm. Based on this, the impact of waveguide design, particularly graded and asymmetric waveguides, on the power output was explored. Additionally, the relationship between the doping profile of the device and lasing efficiency was investigated. The completed 100 μm wide semiconductor edge-emitting laser (EEL) achieved 730 nm continuous wave laser with 1 W output power at 2 A current. This study proposes an approach to enhance the lasing power and optoelectronic conversion efficiency of lasers and provide valuable solutions for their practical applications. |
| format | Article |
| id | doaj-art-3b0da76e21b949eb8ed7236a4f13631a |
| institution | DOAJ |
| issn | 1424-8220 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj-art-3b0da76e21b949eb8ed7236a4f13631a2025-08-20T03:12:15ZengMDPI AGSensors1424-82202025-02-01254117310.3390/s25041173Strain-Compensated Quantum Well Asymmetric Waveguide Edge-Emitting Laser Operating at 730 nmLutai Fan0Lijie Cao1Peng Jia2Qian Liu3Baiheng Liu4Haofei Chen5Yongyi Chen6Li Qin7Lei Liang8Yuxin Lei9Cheng Qiu10Yue Song11Yubing Wang12Yongqiang Ning13Lijun Wang14State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaState Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, ChinaSemiconductor lasers operating at the 730 nm peak wavelength have diverse applications, including biomedical diagnostics, agricultural lighting, and high-precision sensing. However, quantum well (QW) materials, commonly employed at this wavelength, often fail to simultaneously meet the dual requirements of lattice matching and bandgap alignment. In this study, GaAsP/AlGaInP large strain compensation QW with lattice mismatches of −7.533‰ and 1.112‰ was developed. Strain compensation was utilized to address the lattice mismatch while ensuring lasing action at 730 nm. Based on this, the impact of waveguide design, particularly graded and asymmetric waveguides, on the power output was explored. Additionally, the relationship between the doping profile of the device and lasing efficiency was investigated. The completed 100 μm wide semiconductor edge-emitting laser (EEL) achieved 730 nm continuous wave laser with 1 W output power at 2 A current. This study proposes an approach to enhance the lasing power and optoelectronic conversion efficiency of lasers and provide valuable solutions for their practical applications.https://www.mdpi.com/1424-8220/25/4/1173semiconductor lasershigh powerasymmetric waveguidestrain compensationred lasers |
| spellingShingle | Lutai Fan Lijie Cao Peng Jia Qian Liu Baiheng Liu Haofei Chen Yongyi Chen Li Qin Lei Liang Yuxin Lei Cheng Qiu Yue Song Yubing Wang Yongqiang Ning Lijun Wang Strain-Compensated Quantum Well Asymmetric Waveguide Edge-Emitting Laser Operating at 730 nm Sensors semiconductor lasers high power asymmetric waveguide strain compensation red lasers |
| title | Strain-Compensated Quantum Well Asymmetric Waveguide Edge-Emitting Laser Operating at 730 nm |
| title_full | Strain-Compensated Quantum Well Asymmetric Waveguide Edge-Emitting Laser Operating at 730 nm |
| title_fullStr | Strain-Compensated Quantum Well Asymmetric Waveguide Edge-Emitting Laser Operating at 730 nm |
| title_full_unstemmed | Strain-Compensated Quantum Well Asymmetric Waveguide Edge-Emitting Laser Operating at 730 nm |
| title_short | Strain-Compensated Quantum Well Asymmetric Waveguide Edge-Emitting Laser Operating at 730 nm |
| title_sort | strain compensated quantum well asymmetric waveguide edge emitting laser operating at 730 nm |
| topic | semiconductor lasers high power asymmetric waveguide strain compensation red lasers |
| url | https://www.mdpi.com/1424-8220/25/4/1173 |
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