Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices
Abstract The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3. Interlayer interactions engineering via selecting the stacking order in two-dimensional materia...
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Nature Portfolio
2024-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-54841-7 |
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| author | Yuyang Wu Tianjiao Zhang Deping Guo Bicheng Li Ke Pei Wenbin You Yiqian Du Wanchen Xing Yuxiang Lai Wei Ji Yuda Zhao Renchao Che |
| author_facet | Yuyang Wu Tianjiao Zhang Deping Guo Bicheng Li Ke Pei Wenbin You Yiqian Du Wanchen Xing Yuxiang Lai Wei Ji Yuda Zhao Renchao Che |
| author_sort | Yuyang Wu |
| collection | DOAJ |
| description | Abstract The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3. Interlayer interactions engineering via selecting the stacking order in two-dimensional materials allows modulation of ferroelectric properties. Here, we report stacking-dependent ferroelectric domain walls in 2H and 3R stacked α-In2Se3, elucidating the resistance switching mechanism in ferroelectric semiconductor-metal junction devices. In 3R α-In2Se3, the in-plane movement of out-of-plane ferroelectric domain walls yield a large hysteresis window. Conversely, 2H α-In2Se3 devices favor in-plane domain walls and out-of-plane domain wall motion, producing a small hysteresis window. High electric fields induce a ferro-paraelectric phase transition of In2Se3, where 3R In2Se3 reaches the transition through intralayer atomic gliding, while 2H In2Se3 undergoes a complex process comprising intralayer bond dissociation and interlayer bond reconstruction. Our findings demonstrate tunable ferroelectric properties via stacking configurations, offering an expanded dimension for material engineering in ferroelectric devices. |
| format | Article |
| id | doaj-art-3ae48410e07446fa8dea43eb98cae5bf |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-3ae48410e07446fa8dea43eb98cae5bf2024-12-08T12:36:55ZengNature PortfolioNature Communications2041-17232024-12-0115111010.1038/s41467-024-54841-7Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devicesYuyang Wu0Tianjiao Zhang1Deping Guo2Bicheng Li3Ke Pei4Wenbin You5Yiqian Du6Wanchen Xing7Yuxiang Lai8Wei Ji9Yuda Zhao10Renchao Che11Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan UniversityCollege of Integrated Circuits, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang UniversityCollege of Physics and Electronic Engineering, Center for Computational Sciences, Sichuan Normal UniversityLaboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan UniversityLaboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan UniversityLaboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan UniversityLaboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan UniversityCollege of Physics, Donghua UniversityPico Electron Microscopy Center, Innovation Institute for Ocean Materials Characterization, Center for Advanced Studies in Precision Instruments, Hainan UniversityBeiing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, School of Physics, Renmin University of ChinaCollege of Integrated Circuits, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang UniversityLaboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan UniversityAbstract The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In2Se3. Interlayer interactions engineering via selecting the stacking order in two-dimensional materials allows modulation of ferroelectric properties. Here, we report stacking-dependent ferroelectric domain walls in 2H and 3R stacked α-In2Se3, elucidating the resistance switching mechanism in ferroelectric semiconductor-metal junction devices. In 3R α-In2Se3, the in-plane movement of out-of-plane ferroelectric domain walls yield a large hysteresis window. Conversely, 2H α-In2Se3 devices favor in-plane domain walls and out-of-plane domain wall motion, producing a small hysteresis window. High electric fields induce a ferro-paraelectric phase transition of In2Se3, where 3R In2Se3 reaches the transition through intralayer atomic gliding, while 2H In2Se3 undergoes a complex process comprising intralayer bond dissociation and interlayer bond reconstruction. Our findings demonstrate tunable ferroelectric properties via stacking configurations, offering an expanded dimension for material engineering in ferroelectric devices.https://doi.org/10.1038/s41467-024-54841-7 |
| spellingShingle | Yuyang Wu Tianjiao Zhang Deping Guo Bicheng Li Ke Pei Wenbin You Yiqian Du Wanchen Xing Yuxiang Lai Wei Ji Yuda Zhao Renchao Che Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices Nature Communications |
| title | Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices |
| title_full | Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices |
| title_fullStr | Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices |
| title_full_unstemmed | Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices |
| title_short | Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices |
| title_sort | stacking selected polarization switching and phase transition in vdw ferroelectric α in2se3 junction devices |
| url | https://doi.org/10.1038/s41467-024-54841-7 |
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