Design of an X-band high efficiency continuous-mode power amplifier
To improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. Continuous B/J waveform is achieved by controlling the...
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| Format: | Article |
| Language: | zho |
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National Computer System Engineering Research Institute of China
2025-03-01
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| Series: | Dianzi Jishu Yingyong |
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| Online Access: | http://www.chinaaet.com/article/3000170770 |
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| _version_ | 1850211451860418560 |
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| author | Liu Hanxiao Yu Zhongjun Fan Jingxin Zhang Desheng |
| author_facet | Liu Hanxiao Yu Zhongjun Fan Jingxin Zhang Desheng |
| author_sort | Liu Hanxiao |
| collection | DOAJ |
| description | To improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. Continuous B/J waveform is achieved by controlling the second harmonic impedance of the output stage. The amplifier consists of two stages, with the driver stage using enhanced transistors for high gain and the output stage using depletion transistors for high efficiency and watt-level output power. The simulation results show that the power amplifier achieves an output power of 29~30.6 dBm in the frequency band of 7.3~12.2 GHz, with a power gain of 17~18.6 dB, a power added efficiency of more than 50%, a peak efficiency of 59%, an input return loss of less than 10 dB, and a chip size of only 2.1 mm × 1.3 mm. |
| format | Article |
| id | doaj-art-3ad81a8aa5874709adfd64df1daeec0a |
| institution | OA Journals |
| issn | 0258-7998 |
| language | zho |
| publishDate | 2025-03-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj-art-3ad81a8aa5874709adfd64df1daeec0a2025-08-20T02:09:34ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982025-03-01513394310.16157/j.issn.0258-7998.2458923000170770Design of an X-band high efficiency continuous-mode power amplifierLiu Hanxiao0Yu Zhongjun1Fan Jingxin2Zhang Desheng3Aerospace Information Research Institute， Chinese Academy of SciencesAerospace Information Research Institute， Chinese Academy of SciencesAerospace Information Research Institute， Chinese Academy of SciencesAerospace Information Research Institute， Chinese Academy of SciencesTo improve the bandwidth and efficiency of power amplifier, a monolithically integrated X-band high-efficiency continuous B/J power amplifier is designed based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. Continuous B/J waveform is achieved by controlling the second harmonic impedance of the output stage. The amplifier consists of two stages, with the driver stage using enhanced transistors for high gain and the output stage using depletion transistors for high efficiency and watt-level output power. The simulation results show that the power amplifier achieves an output power of 29~30.6 dBm in the frequency band of 7.3~12.2 GHz, with a power gain of 17~18.6 dB, a power added efficiency of more than 50%, a peak efficiency of 59%, an input return loss of less than 10 dB, and a chip size of only 2.1 mm × 1.3 mm.http://www.chinaaet.com/article/3000170770power amplifierhigh efficiencyx-bandcontinuous-modemonolithic microwave integrated circuit |
| spellingShingle | Liu Hanxiao Yu Zhongjun Fan Jingxin Zhang Desheng Design of an X-band high efficiency continuous-mode power amplifier Dianzi Jishu Yingyong power amplifier high efficiency x-band continuous-mode monolithic microwave integrated circuit |
| title | Design of an X-band high efficiency continuous-mode power amplifier |
| title_full | Design of an X-band high efficiency continuous-mode power amplifier |
| title_fullStr | Design of an X-band high efficiency continuous-mode power amplifier |
| title_full_unstemmed | Design of an X-band high efficiency continuous-mode power amplifier |
| title_short | Design of an X-band high efficiency continuous-mode power amplifier |
| title_sort | design of an x band high efficiency continuous mode power amplifier |
| topic | power amplifier high efficiency x-band continuous-mode monolithic microwave integrated circuit |
| url | http://www.chinaaet.com/article/3000170770 |
| work_keys_str_mv | AT liuhanxiao designofanxbandhighefficiencycontinuousmodepoweramplifier AT yuzhongjun designofanxbandhighefficiencycontinuousmodepoweramplifier AT fanjingxin designofanxbandhighefficiencycontinuousmodepoweramplifier AT zhangdesheng designofanxbandhighefficiencycontinuousmodepoweramplifier |