Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching Applications
Electrothermal actuators are highly advantageous for microelectromechanical systems (MEMS) due to their capability to generate significant force and large displacements. Despite these benefits, their application in reconfigurable conduction line switches is limited, particularly when employing comme...
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MDPI AG
2024-10-01
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| author | Abdurrashid Hassan Shuaibu Almur A. S. Rabih Yves Blaquière Frederic Nabki |
| author_facet | Abdurrashid Hassan Shuaibu Almur A. S. Rabih Yves Blaquière Frederic Nabki |
| author_sort | Abdurrashid Hassan Shuaibu |
| collection | DOAJ |
| description | Electrothermal actuators are highly advantageous for microelectromechanical systems (MEMS) due to their capability to generate significant force and large displacements. Despite these benefits, their application in reconfigurable conduction line switches is limited, particularly when employing commercial processes. In DC MEMS switches, electrothermal actuators require electrical insulation between the biasing voltage and the transmission line to prevent interference and maintain the integrity of the switch. This work presents a chevron-type electrothermal actuator utilizing a stack of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">S</mi><mi mathvariant="normal">i</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>/</mo></mrow></semantics></math></inline-formula> Al thin films on a silicon (Si) structural layer beam to create a DC MEMS switch. The design leverages a thin film Al heater to drive the actuator while the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">S</mi><mi mathvariant="normal">i</mi><msub><mi mathvariant="normal">O</mi><mo>2</mo></msub></mrow></semantics></math></inline-formula> layer provides electrical insulation, suppressing crosstalk with the Si layer. The electrical contact resistance of a Si-to-Si interface was evaluated by applying a controlled current and measuring the resultant voltage. A low contact resistance of 150 Ω was achieved when an initial contact gap of 2.52 μm was closed using an actuator with an actuation voltage of 1.2 V and a current of 205 mA, with a switching speed of less than 5 ms. Factors such as the contact force, the temperature, and the residual device layer etching angle significantly impact the Si-to-Si contact resistance and the switch’s longevity. The switch withstands a breakdown voltage up to 350 V at its terminal contacts. Thus, it will be robust to self-actuation caused by unwanted voltage contributions, making it suitable for high-voltage and harsh environment applications. |
| format | Article |
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| institution | OA Journals |
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| language | English |
| publishDate | 2024-10-01 |
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| spelling | doaj-art-3aa2ce8fc3024c848dd158425af063a02025-08-20T01:54:07ZengMDPI AGMicromachines2072-666X2024-10-011511129510.3390/mi15111295Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching ApplicationsAbdurrashid Hassan Shuaibu0Almur A. S. Rabih1Yves Blaquière2Frederic Nabki3Department of Electrical Engineering, École de Technologie Supérieure, Université du Québec, Montréal, QC H3C 1K3, CanadaDepartment of Electrical Engineering, École de Technologie Supérieure, Université du Québec, Montréal, QC H3C 1K3, CanadaDepartment of Electrical Engineering, École de Technologie Supérieure, Université du Québec, Montréal, QC H3C 1K3, CanadaDepartment of Electrical Engineering, École de Technologie Supérieure, Université du Québec, Montréal, QC H3C 1K3, CanadaElectrothermal actuators are highly advantageous for microelectromechanical systems (MEMS) due to their capability to generate significant force and large displacements. Despite these benefits, their application in reconfigurable conduction line switches is limited, particularly when employing commercial processes. In DC MEMS switches, electrothermal actuators require electrical insulation between the biasing voltage and the transmission line to prevent interference and maintain the integrity of the switch. This work presents a chevron-type electrothermal actuator utilizing a stack of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">S</mi><mi mathvariant="normal">i</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>/</mo></mrow></semantics></math></inline-formula> Al thin films on a silicon (Si) structural layer beam to create a DC MEMS switch. The design leverages a thin film Al heater to drive the actuator while the <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">S</mi><mi mathvariant="normal">i</mi><msub><mi mathvariant="normal">O</mi><mo>2</mo></msub></mrow></semantics></math></inline-formula> layer provides electrical insulation, suppressing crosstalk with the Si layer. The electrical contact resistance of a Si-to-Si interface was evaluated by applying a controlled current and measuring the resultant voltage. A low contact resistance of 150 Ω was achieved when an initial contact gap of 2.52 μm was closed using an actuator with an actuation voltage of 1.2 V and a current of 205 mA, with a switching speed of less than 5 ms. Factors such as the contact force, the temperature, and the residual device layer etching angle significantly impact the Si-to-Si contact resistance and the switch’s longevity. The switch withstands a breakdown voltage up to 350 V at its terminal contacts. Thus, it will be robust to self-actuation caused by unwanted voltage contributions, making it suitable for high-voltage and harsh environment applications.https://www.mdpi.com/2072-666X/15/11/1295electrothermal actuatormicroelectromechanical systems (MEMS)PiezoMUMPsDC MEMS switchSi-to-Si contact resistance |
| spellingShingle | Abdurrashid Hassan Shuaibu Almur A. S. Rabih Yves Blaquière Frederic Nabki Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching Applications Micromachines electrothermal actuator microelectromechanical systems (MEMS) PiezoMUMPs DC MEMS switch Si-to-Si contact resistance |
| title | Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching Applications |
| title_full | Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching Applications |
| title_fullStr | Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching Applications |
| title_full_unstemmed | Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching Applications |
| title_short | Laterally Actuated Si-to-Si DC MEMS Switch for Power Switching Applications |
| title_sort | laterally actuated si to si dc mems switch for power switching applications |
| topic | electrothermal actuator microelectromechanical systems (MEMS) PiezoMUMPs DC MEMS switch Si-to-Si contact resistance |
| url | https://www.mdpi.com/2072-666X/15/11/1295 |
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