A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission

A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission

This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. By combining theoretical analysis with d...

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Bibliographic Details
Main Authors: Hualian Tang, Ailan Tang, Weifeng Liu, Jingxiang Huang, Jianjun Song, Wenjie Sun
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
2.45 G
wireless energy transfer
weak energy density
NCFET
rectification efficiency
sentaurus TCAD
Online Access:https://www.mdpi.com/2072-666X/16/1/58
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