A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission
This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. By combining theoretical analysis with d...
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| Format: | Article |
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MDPI AG
2024-12-01
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| Online Access: | https://www.mdpi.com/2072-666X/16/1/58 |
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| author | Hualian Tang Ailan Tang Weifeng Liu Jingxiang Huang Jianjun Song Wenjie Sun |
| author_facet | Hualian Tang Ailan Tang Weifeng Liu Jingxiang Huang Jianjun Song Wenjie Sun |
| author_sort | Hualian Tang |
| collection | DOAJ |
| description | This paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. By combining theoretical analysis with device simulations, the impacts of the ferroelectric material anisotropy, ferroelectric layer thickness, and active region doping concentration on the device performance were systematically optimized. The proposed NCFET structure is tailored for microwave wireless power transmission applications. Based on the optimized NCFET, a half-wave rectifier circuit employing a novel diode connection configuration was constructed and verified through transient simulations. The results show that at a microwave frequency of 2.45 GHz, the designed NCFET rectifier achieves rectification efficiencies of 16.1% and 29.75% at input power densities of −10 dBm and −6 dBm, respectively, which are 7.15 and 2.3 times higher than those of conventional silicon-based MOS devices. Furthermore, it significantly outperforms CMOS rectifiers reported in the literature. This study demonstrates the superior rectification performance of the proposed NCFET under low-power density conditions, offering an efficient device solution for microwave wireless power transmission systems. |
| format | Article |
| id | doaj-art-3a2d6e9dc42e47f9aadcad755abc097c |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-3a2d6e9dc42e47f9aadcad755abc097c2025-01-24T13:41:58ZengMDPI AGMicromachines2072-666X2024-12-011615810.3390/mi16010058A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless TransmissionHualian Tang0Ailan Tang1Weifeng Liu2Jingxiang Huang3Jianjun Song4Wenjie Sun5State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology, School of Microelectronics, Xi’an University of Electronic Science and Technology, Xi’an 710071, ChinaState Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology, School of Microelectronics, Xi’an University of Electronic Science and Technology, Xi’an 710071, ChinaState Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology, School of Microelectronics, Xi’an University of Electronic Science and Technology, Xi’an 710071, ChinaSchool of Electronic Science and Technology, Xi’an University of Electronic Science and Technology, Xi’an 710071, ChinaState Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology, School of Microelectronics, Xi’an University of Electronic Science and Technology, Xi’an 710071, ChinaState Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology, School of Microelectronics, Xi’an University of Electronic Science and Technology, Xi’an 710071, ChinaThis paper proposes and designs a silicon-based negative capacitance field effect transistor (NCFET) to replace conventional MOSFETs as the rectifying device in RF-DC circuits, aiming to enhance the rectification efficiency under low-power density conditions. By combining theoretical analysis with device simulations, the impacts of the ferroelectric material anisotropy, ferroelectric layer thickness, and active region doping concentration on the device performance were systematically optimized. The proposed NCFET structure is tailored for microwave wireless power transmission applications. Based on the optimized NCFET, a half-wave rectifier circuit employing a novel diode connection configuration was constructed and verified through transient simulations. The results show that at a microwave frequency of 2.45 GHz, the designed NCFET rectifier achieves rectification efficiencies of 16.1% and 29.75% at input power densities of −10 dBm and −6 dBm, respectively, which are 7.15 and 2.3 times higher than those of conventional silicon-based MOS devices. Furthermore, it significantly outperforms CMOS rectifiers reported in the literature. This study demonstrates the superior rectification performance of the proposed NCFET under low-power density conditions, offering an efficient device solution for microwave wireless power transmission systems.https://www.mdpi.com/2072-666X/16/1/582.45 Gwireless energy transferweak energy densityNCFETrectification efficiencysentaurus TCAD |
| spellingShingle | Hualian Tang Ailan Tang Weifeng Liu Jingxiang Huang Jianjun Song Wenjie Sun A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission Micromachines 2.45 G wireless energy transfer weak energy density NCFET rectification efficiency sentaurus TCAD |
| title | A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission |
| title_full | A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission |
| title_fullStr | A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission |
| title_full_unstemmed | A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission |
| title_short | A Negative Capacitance Field-Effect Transistor with High Rectification Efficiency for Weak-Energy 2.45 GHz Microwave Wireless Transmission |
| title_sort | negative capacitance field effect transistor with high rectification efficiency for weak energy 2 45 ghz microwave wireless transmission |
| topic | 2.45 G wireless energy transfer weak energy density NCFET rectification efficiency sentaurus TCAD |
| url | https://www.mdpi.com/2072-666X/16/1/58 |
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