Robust Transition Metal Contacts for Aligned Carbon Nanotubes
Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the forma...
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2025-05-01
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| author | Gang Huang Junhong Wu Haiou Li Honggang Liu |
| author_facet | Gang Huang Junhong Wu Haiou Li Honggang Liu |
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| description | Aligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the formation of transition metal carbides at the metal–CNT interface, significantly reducing contact resistance and enhancing stability. Using the transmission line method (TLM), we demonstrate that RTA reduces the contact resistance at the Ti/A-CNT interface from 112.26 k<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">Ω</mi><mspace width="0.166667em"></mspace><mo>·</mo><mspace width="0.166667em"></mspace><mi mathvariant="normal">μ</mi></mrow></semantics></math></inline-formula>m to 1.57 k<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">Ω</mi><mspace width="0.166667em"></mspace><mo>·</mo><mspace width="0.166667em"></mspace><mi mathvariant="normal">μ</mi></mrow></semantics></math></inline-formula>m and at the Ni/A-CNT interface from 81.72 k<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">Ω</mi><mspace width="0.166667em"></mspace><mo>·</mo><mspace width="0.166667em"></mspace><mi mathvariant="normal">μ</mi></mrow></semantics></math></inline-formula>m to 1.17 k<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">Ω</mi><mspace width="0.166667em"></mspace><mo>·</mo><mspace width="0.166667em"></mspace><mi mathvariant="normal">μ</mi></mrow></semantics></math></inline-formula>m, representing a reduction of over an order of magnitude. Moreover, the Schottky barrier heights (SBHs) for both the Ti/A-CNT and Ni/A-CNT interfaces decreases by approximately 50% after annealing. A comparative analysis with Pd/A-CNT contacts shows that Ti and Ni contacts exhibit superior reliability under harsh conditions. This work provides a viable solution for improving the electrical performance and reliability of CNT-based devices, offering a pathway toward the development of future CMOS technologies. |
| format | Article |
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| spelling | doaj-art-3a1f0e49204e47799e673b96fb4ebad42025-08-20T03:14:39ZengMDPI AGNanomaterials2079-49912025-05-01151073610.3390/nano15100736Robust Transition Metal Contacts for Aligned Carbon NanotubesGang Huang0Junhong Wu1Haiou Li2Honggang Liu3Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, ChinaSchool of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, ChinaGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, ChinaSchool of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, ChinaAligned carbon nanotubes (A-CNTs) are emerging as one of the most promising materials for next-generation nanoelectronics. However, achieving reliable ohmic contacts between A-CNTs and metals remains a critical challenge. In this study, we employ rapid thermal annealing (RTA) to facilitate the formation of transition metal carbides at the metal–CNT interface, significantly reducing contact resistance and enhancing stability. Using the transmission line method (TLM), we demonstrate that RTA reduces the contact resistance at the Ti/A-CNT interface from 112.26 k<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">Ω</mi><mspace width="0.166667em"></mspace><mo>·</mo><mspace width="0.166667em"></mspace><mi mathvariant="normal">μ</mi></mrow></semantics></math></inline-formula>m to 1.57 k<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">Ω</mi><mspace width="0.166667em"></mspace><mo>·</mo><mspace width="0.166667em"></mspace><mi mathvariant="normal">μ</mi></mrow></semantics></math></inline-formula>m and at the Ni/A-CNT interface from 81.72 k<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">Ω</mi><mspace width="0.166667em"></mspace><mo>·</mo><mspace width="0.166667em"></mspace><mi mathvariant="normal">μ</mi></mrow></semantics></math></inline-formula>m to 1.17 k<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">Ω</mi><mspace width="0.166667em"></mspace><mo>·</mo><mspace width="0.166667em"></mspace><mi mathvariant="normal">μ</mi></mrow></semantics></math></inline-formula>m, representing a reduction of over an order of magnitude. Moreover, the Schottky barrier heights (SBHs) for both the Ti/A-CNT and Ni/A-CNT interfaces decreases by approximately 50% after annealing. A comparative analysis with Pd/A-CNT contacts shows that Ti and Ni contacts exhibit superior reliability under harsh conditions. This work provides a viable solution for improving the electrical performance and reliability of CNT-based devices, offering a pathway toward the development of future CMOS technologies.https://www.mdpi.com/2079-4991/15/10/736transition metal carbidescontact resistancealigned carbon nanotuberapid thermal annealingSchottky barrier height |
| spellingShingle | Gang Huang Junhong Wu Haiou Li Honggang Liu Robust Transition Metal Contacts for Aligned Carbon Nanotubes Nanomaterials transition metal carbides contact resistance aligned carbon nanotube rapid thermal annealing Schottky barrier height |
| title | Robust Transition Metal Contacts for Aligned Carbon Nanotubes |
| title_full | Robust Transition Metal Contacts for Aligned Carbon Nanotubes |
| title_fullStr | Robust Transition Metal Contacts for Aligned Carbon Nanotubes |
| title_full_unstemmed | Robust Transition Metal Contacts for Aligned Carbon Nanotubes |
| title_short | Robust Transition Metal Contacts for Aligned Carbon Nanotubes |
| title_sort | robust transition metal contacts for aligned carbon nanotubes |
| topic | transition metal carbides contact resistance aligned carbon nanotube rapid thermal annealing Schottky barrier height |
| url | https://www.mdpi.com/2079-4991/15/10/736 |
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