Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor
Abstract Conventional diode‐based rectifiers suffer from limited applicability in low‐power electronics and high‐frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non‐centrosymmetric quantum materials can e...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-05-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400648 |
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| author | Hao Liu Ting Yong Lim Shijia Tian Jinfeng Zhai Du Xiang Tao Liu Tay‐Rong Chang Pan He Jian Shen |
| author_facet | Hao Liu Ting Yong Lim Shijia Tian Jinfeng Zhai Du Xiang Tao Liu Tay‐Rong Chang Pan He Jian Shen |
| author_sort | Hao Liu |
| collection | DOAJ |
| description | Abstract Conventional diode‐based rectifiers suffer from limited applicability in low‐power electronics and high‐frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non‐centrosymmetric quantum materials can enable diode‐free rectification with advantages such as large active area, low power threshold, and high cutoff frequency. Here, a giant NHE is reported in a chiral semiconductor hosting Weyl nodes, achieving a voltage responsivity of up to 1.4×107 V W−1 at low temperature and 1.7×106 V W−1 at room temperature. This represents orders of magnitude improvement over existing NHE rectifiers and commercial Schottky diodes. This ultrahigh rectification is attributed to the significant contributions of Weyl nodes at the conduction band edge. Moreover, the device exhibits remarkable tunability through electrostatic gate voltages. The findings establish Weyl semiconductors as a promising platform for developing highly sensitive NHE rectifiers for low‐power and high‐frequency applications. |
| format | Article |
| id | doaj-art-3943c26ed61d417fbcd009e441e34ea0 |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-3943c26ed61d417fbcd009e441e34ea02025-08-20T01:48:37ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-05-01116n/an/a10.1002/aelm.202400648Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl SemiconductorHao Liu0Ting Yong Lim1Shijia Tian2Jinfeng Zhai3Du Xiang4Tao Liu5Tay‐Rong Chang6Pan He7Jian Shen8State Key Laboratory of Surface Physics and Institute for Nanoelectronic devices and Quantum computing Fudan University Shanghai 200433 ChinaDepartment of Physics National Cheng Kung University Tainan 701 TaiwanShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics and Department of Materials Science Fudan University Shanghai 200438 People's Republic of ChinaState Key Laboratory of Surface Physics and Institute for Nanoelectronic devices and Quantum computing Fudan University Shanghai 200433 ChinaState Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai 200438 People's Republic of ChinaShanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics and Department of Materials Science Fudan University Shanghai 200438 People's Republic of ChinaDepartment of Physics National Cheng Kung University Tainan 701 TaiwanState Key Laboratory of Surface Physics and Institute for Nanoelectronic devices and Quantum computing Fudan University Shanghai 200433 ChinaState Key Laboratory of Surface Physics and Institute for Nanoelectronic devices and Quantum computing Fudan University Shanghai 200433 ChinaAbstract Conventional diode‐based rectifiers suffer from limited applicability in low‐power electronics and high‐frequency wireless networks due to their inherent junction structures. Recent studies have demonstrated that the nonlinear Hall effect (NHE) in non‐centrosymmetric quantum materials can enable diode‐free rectification with advantages such as large active area, low power threshold, and high cutoff frequency. Here, a giant NHE is reported in a chiral semiconductor hosting Weyl nodes, achieving a voltage responsivity of up to 1.4×107 V W−1 at low temperature and 1.7×106 V W−1 at room temperature. This represents orders of magnitude improvement over existing NHE rectifiers and commercial Schottky diodes. This ultrahigh rectification is attributed to the significant contributions of Weyl nodes at the conduction band edge. Moreover, the device exhibits remarkable tunability through electrostatic gate voltages. The findings establish Weyl semiconductors as a promising platform for developing highly sensitive NHE rectifiers for low‐power and high‐frequency applications.https://doi.org/10.1002/aelm.202400648Berry curvature dipolenonlinear Hall effectrectification effectvoltage responsivityWeyl semiconductor |
| spellingShingle | Hao Liu Ting Yong Lim Shijia Tian Jinfeng Zhai Du Xiang Tao Liu Tay‐Rong Chang Pan He Jian Shen Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor Advanced Electronic Materials Berry curvature dipole nonlinear Hall effect rectification effect voltage responsivity Weyl semiconductor |
| title | Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor |
| title_full | Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor |
| title_fullStr | Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor |
| title_full_unstemmed | Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor |
| title_short | Giant Nonlinear Hall Effect Induced Ultrahigh Rectification in a Weyl Semiconductor |
| title_sort | giant nonlinear hall effect induced ultrahigh rectification in a weyl semiconductor |
| topic | Berry curvature dipole nonlinear Hall effect rectification effect voltage responsivity Weyl semiconductor |
| url | https://doi.org/10.1002/aelm.202400648 |
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