Passivation Technology for High Power Thyristor Chip Terminal
In order to improve the long-term reliability of high power thyristor, a novel semi-insulator passivation layer was proposed to replace the conventional insulator layer which can avoid the accumulation of surface charge. The effect of surface charge on blocking ability of a HVDC thyristor was simula...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.007 |
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| Summary: | In order to improve the long-term reliability of high power thyristor, a novel semi-insulator passivation layer was proposed to replace the conventional insulator layer which can avoid the accumulation of surface charge. The effect of surface charge on blocking ability of a HVDC thyristor was simulated through TCAD (technology computer aided design). The comparison of these two designs through hot temperature blocking and humidity test showed an improved reliability of a semi-insulator passivated device. Additional power cycling test demonstrated that the fatigue-life expectation of the proposal design could meet the requirement of HVDC scheme. |
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| ISSN: | 2096-5427 |