An Algebraic Model for the Recombination Rate in Semiconductors
This paper consists of a new formalism in order to interpret the electron-hole recombination rate in semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts introduced in a unique way. The methodology introduced here represents an interesting tool to evaluate c...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
1993-01-01
|
| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1993/68260 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | This paper consists of a new formalism in order to interpret the electron-hole recombination rate in
semiconductors by means of linear algebraic methods; a formulation based on tensorial concepts introduced
in a unique way. The methodology introduced here represents an interesting tool to evaluate
certain properties of semiconductors from a theoretical point of view. |
|---|---|
| ISSN: | 0882-7516 1563-5031 |