Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2
Abstract The high contact resistance between MoS2 and metals hinders its potential as an ideal solution for overcoming the short‐channel effect in silicon‐based FETs at sub‐3 nm scales. A MoS2‐based transistor, featuring bilayer MoS2 connected to Cu‐intercalated bilayer MoS2 electrodes is theoretica...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-08-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202500100 |
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| author | Huan Wang Xiaojie Liu Hui Wang Yin Wang Haitao Yin |
| author_facet | Huan Wang Xiaojie Liu Hui Wang Yin Wang Haitao Yin |
| author_sort | Huan Wang |
| collection | DOAJ |
| description | Abstract The high contact resistance between MoS2 and metals hinders its potential as an ideal solution for overcoming the short‐channel effect in silicon‐based FETs at sub‐3 nm scales. A MoS2‐based transistor, featuring bilayer MoS2 connected to Cu‐intercalated bilayer MoS2 electrodes is theoretically designed. At 0.6 V, contact resistance is 16.7 Ω µm (zigzag) and 30.0 Ω µm (armchair), nearing or even surpassing the 30 Ω µm quantum limit for single‐layer materials. This low resistance is attributed to the elimination of the tunneling barrier and the creation of ohmic contacts. Additionally, the small contact potential difference enables lower operating voltages. The intercalation design offers a novel approach to achieving low contact resistance in two‐dimentional electronic devices. |
| format | Article |
| id | doaj-art-3891397dfc0b4eeda70f3b2a97569e4e |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-3891397dfc0b4eeda70f3b2a97569e4e2025-08-25T10:40:02ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-08-011113n/an/a10.1002/aelm.202500100Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2Huan Wang0Xiaojie Liu1Hui Wang2Yin Wang3Haitao Yin4Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education School of Physics and Electronic Engineering Harbin Normal University Harbin 150025 ChinaKey Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education School of Physics and Electronic Engineering Harbin Normal University Harbin 150025 ChinaKey Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education School of Physics and Electronic Engineering Harbin Normal University Harbin 150025 ChinaDepartment of Physics and International Centre for Quantum and Molecular Structures Shanghai University Shanghai 200444 ChinaKey Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education School of Physics and Electronic Engineering Harbin Normal University Harbin 150025 ChinaAbstract The high contact resistance between MoS2 and metals hinders its potential as an ideal solution for overcoming the short‐channel effect in silicon‐based FETs at sub‐3 nm scales. A MoS2‐based transistor, featuring bilayer MoS2 connected to Cu‐intercalated bilayer MoS2 electrodes is theoretically designed. At 0.6 V, contact resistance is 16.7 Ω µm (zigzag) and 30.0 Ω µm (armchair), nearing or even surpassing the 30 Ω µm quantum limit for single‐layer materials. This low resistance is attributed to the elimination of the tunneling barrier and the creation of ohmic contacts. Additionally, the small contact potential difference enables lower operating voltages. The intercalation design offers a novel approach to achieving low contact resistance in two‐dimentional electronic devices.https://doi.org/10.1002/aelm.202500100contact resistanceintercalationMoS2ohmic contact |
| spellingShingle | Huan Wang Xiaojie Liu Hui Wang Yin Wang Haitao Yin Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2 Advanced Electronic Materials contact resistance intercalation MoS2 ohmic contact |
| title | Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2 |
| title_full | Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2 |
| title_fullStr | Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2 |
| title_full_unstemmed | Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2 |
| title_short | Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2 |
| title_sort | achieving ultra low contact resistance via copper intercalated bilayer mos2 |
| topic | contact resistance intercalation MoS2 ohmic contact |
| url | https://doi.org/10.1002/aelm.202500100 |
| work_keys_str_mv | AT huanwang achievingultralowcontactresistanceviacopperintercalatedbilayermos2 AT xiaojieliu achievingultralowcontactresistanceviacopperintercalatedbilayermos2 AT huiwang achievingultralowcontactresistanceviacopperintercalatedbilayermos2 AT yinwang achievingultralowcontactresistanceviacopperintercalatedbilayermos2 AT haitaoyin achievingultralowcontactresistanceviacopperintercalatedbilayermos2 |