High-frequency characteristics of ultra-short gate MoS2 transistors
Short channel transistors are gaining attention for high-frequency applications. MoS _2 transistors, with their atomically thin structure, exhibit excellent on/off switching and low intrinsic capacitance. This study employs the nonequilibrium Green’s function formalism to analyze their electronic pr...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adbcf5 |
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