Theoretical modeling of magneto-Conductivity (MC) in dilute p-Si/SiGe/Si under magnetic fields
In the present work, we consider magneto-conductivity behavior within a two-dimensional p-Si/SiGe/Si system. A theoretical model of magneto-conductivity with three important contributions is derived, namely, an account for the weak localization process, for electron-electron interaction effects, and...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2025-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | https://www.epj-conferences.org/articles/epjconf/pdf/2025/11/epjconf_cofmer2025_03002.pdf |
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| Summary: | In the present work, we consider magneto-conductivity behavior within a two-dimensional p-Si/SiGe/Si system. A theoretical model of magneto-conductivity with three important contributions is derived, namely, an account for the weak localization process, for electron-electron interaction effects, and for the Zeeman effect, which is taken into account only if a magnetic field is present. Further, theoretical values predicted by our model are compared with experimental magneto-conductivity values for a comparison of similarity and difference with experimental values. In our research, experimental data for p-Si/SiGe/Si were used, which has been previously collected by I. L. Drichko et al. [1] for supporting purposes. |
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| ISSN: | 2100-014X |