A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLP
In this paper, the fabrication and testing of an integrated passive device (IPD) structure for X-band FMCW radar based on the fan-out wafer-level packaging (FOWLP) process are discussed. First, a transition line structure is added to the IPD structure to increase the upper impedance limit of the sub...
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MDPI AG
2025-06-01
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| Online Access: | https://www.mdpi.com/2072-666X/16/6/719 |
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| author | Jiajie Yang Lixin Xu Xiangyu Yin Ke Yang |
| author_facet | Jiajie Yang Lixin Xu Xiangyu Yin Ke Yang |
| author_sort | Jiajie Yang |
| collection | DOAJ |
| description | In this paper, the fabrication and testing of an integrated passive device (IPD) structure for X-band FMCW radar based on the fan-out wafer-level packaging (FOWLP) process are discussed. First, a transition line structure is added to the IPD structure to increase the upper impedance limit of the substrate, so as to reduce the process implementation difficulty and development cost. Second, the vertical soldered SubMiniature Push-On Micro (SMPM) interfaces testing method is proposed, reducing the testing difficulty of the dual-port structure with the antenna. Finally, the process fabrication as well as testing of the IPD structure are completed. The dimensions of the fabricated structure are 16.983 × 24.099 × 0.56 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mi>mm</mi><mn>3</mn></msup></semantics></math></inline-formula>. Test results show that, with a center frequency of 8.5 GHz, the actual operational bandwidth of the structure reaches 7.66% (8.095–8.74 GHz), with a maximum isolation of 33.9 dB. The bandwidth with isolation greater than 20 dB is 1.76% (8.455–8.605 GHz). The maximum gain at the center frequency is 2.02 dBi. Additionally, experimental uncertainty analysis is performed on different IPD structures, and the measurement results are basically consistent. These results validate the feasibility of the FOWLP process in the miniaturization of X-band FMCW radar antenna and other passive devices. |
| format | Article |
| id | doaj-art-386c03f103d6450ca93dbdc14a651c8b |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-386c03f103d6450ca93dbdc14a651c8b2025-08-20T03:27:24ZengMDPI AGMicromachines2072-666X2025-06-0116671910.3390/mi16060719A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLPJiajie Yang0Lixin Xu1Xiangyu Yin2Ke Yang3School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, ChinaSchool of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, ChinaIn this paper, the fabrication and testing of an integrated passive device (IPD) structure for X-band FMCW radar based on the fan-out wafer-level packaging (FOWLP) process are discussed. First, a transition line structure is added to the IPD structure to increase the upper impedance limit of the substrate, so as to reduce the process implementation difficulty and development cost. Second, the vertical soldered SubMiniature Push-On Micro (SMPM) interfaces testing method is proposed, reducing the testing difficulty of the dual-port structure with the antenna. Finally, the process fabrication as well as testing of the IPD structure are completed. The dimensions of the fabricated structure are 16.983 × 24.099 × 0.56 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mi>mm</mi><mn>3</mn></msup></semantics></math></inline-formula>. Test results show that, with a center frequency of 8.5 GHz, the actual operational bandwidth of the structure reaches 7.66% (8.095–8.74 GHz), with a maximum isolation of 33.9 dB. The bandwidth with isolation greater than 20 dB is 1.76% (8.455–8.605 GHz). The maximum gain at the center frequency is 2.02 dBi. Additionally, experimental uncertainty analysis is performed on different IPD structures, and the measurement results are basically consistent. These results validate the feasibility of the FOWLP process in the miniaturization of X-band FMCW radar antenna and other passive devices.https://www.mdpi.com/2072-666X/16/6/719integrated passive devicefan-out wafer-level packagethrough-mold viaantenna-in-package (AiP)ultra-thin |
| spellingShingle | Jiajie Yang Lixin Xu Xiangyu Yin Ke Yang A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLP Micromachines integrated passive device fan-out wafer-level package through-mold via antenna-in-package (AiP) ultra-thin |
| title | A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLP |
| title_full | A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLP |
| title_fullStr | A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLP |
| title_full_unstemmed | A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLP |
| title_short | A X-Band Integrated Passive Device Structure Based on TMV-Embedded FOWLP |
| title_sort | x band integrated passive device structure based on tmv embedded fowlp |
| topic | integrated passive device fan-out wafer-level package through-mold via antenna-in-package (AiP) ultra-thin |
| url | https://www.mdpi.com/2072-666X/16/6/719 |
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