An online extraction method of junction temperature in IGBT devices with saturation voltage drop
The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability and extend the service life of power electron...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Department of Electric Drive for Locomotives
2023-09-01
|
| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.019 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849323376214016000 |
|---|---|
| author | WANG Zequn TIAN Xiaoyu SONG Zhiru SONG Wensheng |
| author_facet | WANG Zequn TIAN Xiaoyu SONG Zhiru SONG Wensheng |
| author_sort | WANG Zequn |
| collection | DOAJ |
| description | The junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability and extend the service life of power electronic systems. Based on the conduction voltage drop of IGBT, this paper proposed a model and a measuring circuit for monitoring the junction temperature by low-current and high-current saturation voltage drops to achieve accurate online monitoring of IGBT junction temperature. Firstly, combined the operating principle of IGBT, the paper derived the expression for the conduction voltage drop. Then, according to the characteristics of low-current and high-current saturation voltage drop, the junction temperature monitoring models was established. Finally, it designed a low-current constant current source circuit and a conduction voltage drop sampling circuit, and conducted experiments to verify the models. The experimental results show that the low-current saturation voltage drop is linearly related to the IGBT junction temperature, while the high-current saturation voltage drop is nonlinearly related. The measurement errors for both methods are 1.29% and 4.91% respectively. |
| format | Article |
| id | doaj-art-38403774745f4f87948acbb950d22bee |
| institution | Kabale University |
| issn | 1000-128X |
| language | zho |
| publishDate | 2023-09-01 |
| publisher | Editorial Department of Electric Drive for Locomotives |
| record_format | Article |
| series | 机车电传动 |
| spelling | doaj-art-38403774745f4f87948acbb950d22bee2025-08-20T03:49:03ZzhoEditorial Department of Electric Drive for Locomotives机车电传动1000-128X2023-09-0117017642839133An online extraction method of junction temperature in IGBT devices with saturation voltage dropWANG ZequnTIAN XiaoyuSONG ZhiruSONG WenshengThe junction temperature, working performance, lifespan, and reliability of insulated gate bipolar transistor (IGBT) modules are closely related. Achieving online monitoring of IGBT junction temperature is of great significance to improve the reliability and extend the service life of power electronic systems. Based on the conduction voltage drop of IGBT, this paper proposed a model and a measuring circuit for monitoring the junction temperature by low-current and high-current saturation voltage drops to achieve accurate online monitoring of IGBT junction temperature. Firstly, combined the operating principle of IGBT, the paper derived the expression for the conduction voltage drop. Then, according to the characteristics of low-current and high-current saturation voltage drop, the junction temperature monitoring models was established. Finally, it designed a low-current constant current source circuit and a conduction voltage drop sampling circuit, and conducted experiments to verify the models. The experimental results show that the low-current saturation voltage drop is linearly related to the IGBT junction temperature, while the high-current saturation voltage drop is nonlinearly related. The measurement errors for both methods are 1.29% and 4.91% respectively.http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.019IGBT moduleconduction voltage dropjunction temperature measurementlow-current saturation voltage drop methodhigh-current saturation voltage drop method |
| spellingShingle | WANG Zequn TIAN Xiaoyu SONG Zhiru SONG Wensheng An online extraction method of junction temperature in IGBT devices with saturation voltage drop 机车电传动 IGBT module conduction voltage drop junction temperature measurement low-current saturation voltage drop method high-current saturation voltage drop method |
| title | An online extraction method of junction temperature in IGBT devices with saturation voltage drop |
| title_full | An online extraction method of junction temperature in IGBT devices with saturation voltage drop |
| title_fullStr | An online extraction method of junction temperature in IGBT devices with saturation voltage drop |
| title_full_unstemmed | An online extraction method of junction temperature in IGBT devices with saturation voltage drop |
| title_short | An online extraction method of junction temperature in IGBT devices with saturation voltage drop |
| title_sort | online extraction method of junction temperature in igbt devices with saturation voltage drop |
| topic | IGBT module conduction voltage drop junction temperature measurement low-current saturation voltage drop method high-current saturation voltage drop method |
| url | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2023.05.019 |
| work_keys_str_mv | AT wangzequn anonlineextractionmethodofjunctiontemperatureinigbtdeviceswithsaturationvoltagedrop AT tianxiaoyu anonlineextractionmethodofjunctiontemperatureinigbtdeviceswithsaturationvoltagedrop AT songzhiru anonlineextractionmethodofjunctiontemperatureinigbtdeviceswithsaturationvoltagedrop AT songwensheng anonlineextractionmethodofjunctiontemperatureinigbtdeviceswithsaturationvoltagedrop AT wangzequn onlineextractionmethodofjunctiontemperatureinigbtdeviceswithsaturationvoltagedrop AT tianxiaoyu onlineextractionmethodofjunctiontemperatureinigbtdeviceswithsaturationvoltagedrop AT songzhiru onlineextractionmethodofjunctiontemperatureinigbtdeviceswithsaturationvoltagedrop AT songwensheng onlineextractionmethodofjunctiontemperatureinigbtdeviceswithsaturationvoltagedrop |