High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics
Abstract With the advances in bulk Mg3Bi2, there is increasing interest in pursuing whether Mg3Bi2 can be fabricated into flexible thin films for wearable electronics to expand the practical applications. However, the development of fabrication processes for flexible Mg3Bi2 thin films and the effect...
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| Format: | Article |
| Language: | English |
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Wiley
2024-11-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202409788 |
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| author | Boxuan Hu Xiao‐Lei Shi Tianyi Cao Siqi Liu Min Zhang Wanyu Lyu Liangcao Yin Tuquabo Tesfamichael Qingfeng Liu Zhi‐Gang Chen |
| author_facet | Boxuan Hu Xiao‐Lei Shi Tianyi Cao Siqi Liu Min Zhang Wanyu Lyu Liangcao Yin Tuquabo Tesfamichael Qingfeng Liu Zhi‐Gang Chen |
| author_sort | Boxuan Hu |
| collection | DOAJ |
| description | Abstract With the advances in bulk Mg3Bi2, there is increasing interest in pursuing whether Mg3Bi2 can be fabricated into flexible thin films for wearable electronics to expand the practical applications. However, the development of fabrication processes for flexible Mg3Bi2 thin films and the effective enhancement of their thermoelectric performance remain underexplored. Here, magnetron sputtering and ex‐situ annealing techniques is used to fabricate flexible Mg3Bi2 thermoelectric thin films with a power factor of up to 1.59 µW cm−1 K−2 at 60 °C, ranking as the top value among all reported n‐type Mg3Bi2 thin films. Extensive characterizations show that ex‐situ annealing, and optimized sputtering processes allow precise control over film thickness. These techniques ensure high adhesion of the films to various substrates, resulting in excellent flexibility, with <10% performance degradation after 500 bending cycles with a radius of 5 mm. Furthermore, for the first time, flexible thermoelectric devices are fabricated with both p‐type and n‐type Mg3Bi2 legs, which achieve an output power of 0.17 nW and a power density of 1.67 µW cm−2 at a very low temperature difference of 2.5 °C, highlighting the practical application potential of the device. |
| format | Article |
| id | doaj-art-37ff375edf7a471e95b10e3e843b0cfe |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-37ff375edf7a471e95b10e3e843b0cfe2025-08-20T01:52:38ZengWileyAdvanced Science2198-38442024-11-011144n/an/a10.1002/advs.202409788High‐Performing Flexible Mg3Bi2 Thin‐Film ThermoelectricsBoxuan Hu0Xiao‐Lei Shi1Tianyi Cao2Siqi Liu3Min Zhang4Wanyu Lyu5Liangcao Yin6Tuquabo Tesfamichael7Qingfeng Liu8Zhi‐Gang Chen9School of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland 4000 AustraliaSchool of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland 4000 AustraliaSchool of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland 4000 AustraliaSchool of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland 4000 AustraliaSchool of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland 4000 AustraliaSchool of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland 4000 AustraliaState Key Laboratory of Materials‐Oriented Chemical Engineering College of Chemical Engineering Nanjing Tech University Nanjing 211816 ChinaSchool of Mechanical Medical and Process Engineering Queensland University of Technology Brisbane Queensland 4001 AustraliaState Key Laboratory of Materials‐Oriented Chemical Engineering College of Chemical Engineering Nanjing Tech University Nanjing 211816 ChinaSchool of Chemistry and Physics ARC Research Hub in Zero‐emission Power Generation for Carbon Neutrality and Centre for Materials Science Queensland University of Technology Brisbane Queensland 4000 AustraliaAbstract With the advances in bulk Mg3Bi2, there is increasing interest in pursuing whether Mg3Bi2 can be fabricated into flexible thin films for wearable electronics to expand the practical applications. However, the development of fabrication processes for flexible Mg3Bi2 thin films and the effective enhancement of their thermoelectric performance remain underexplored. Here, magnetron sputtering and ex‐situ annealing techniques is used to fabricate flexible Mg3Bi2 thermoelectric thin films with a power factor of up to 1.59 µW cm−1 K−2 at 60 °C, ranking as the top value among all reported n‐type Mg3Bi2 thin films. Extensive characterizations show that ex‐situ annealing, and optimized sputtering processes allow precise control over film thickness. These techniques ensure high adhesion of the films to various substrates, resulting in excellent flexibility, with <10% performance degradation after 500 bending cycles with a radius of 5 mm. Furthermore, for the first time, flexible thermoelectric devices are fabricated with both p‐type and n‐type Mg3Bi2 legs, which achieve an output power of 0.17 nW and a power density of 1.67 µW cm−2 at a very low temperature difference of 2.5 °C, highlighting the practical application potential of the device.https://doi.org/10.1002/advs.202409788deviceflexibilityMg3Bi2thermoelectricthin film |
| spellingShingle | Boxuan Hu Xiao‐Lei Shi Tianyi Cao Siqi Liu Min Zhang Wanyu Lyu Liangcao Yin Tuquabo Tesfamichael Qingfeng Liu Zhi‐Gang Chen High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics Advanced Science device flexibility Mg3Bi2 thermoelectric thin film |
| title | High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics |
| title_full | High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics |
| title_fullStr | High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics |
| title_full_unstemmed | High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics |
| title_short | High‐Performing Flexible Mg3Bi2 Thin‐Film Thermoelectrics |
| title_sort | high performing flexible mg3bi2 thin film thermoelectrics |
| topic | device flexibility Mg3Bi2 thermoelectric thin film |
| url | https://doi.org/10.1002/advs.202409788 |
| work_keys_str_mv | AT boxuanhu highperformingflexiblemg3bi2thinfilmthermoelectrics AT xiaoleishi highperformingflexiblemg3bi2thinfilmthermoelectrics AT tianyicao highperformingflexiblemg3bi2thinfilmthermoelectrics AT siqiliu highperformingflexiblemg3bi2thinfilmthermoelectrics AT minzhang highperformingflexiblemg3bi2thinfilmthermoelectrics AT wanyulyu highperformingflexiblemg3bi2thinfilmthermoelectrics AT liangcaoyin highperformingflexiblemg3bi2thinfilmthermoelectrics AT tuquabotesfamichael highperformingflexiblemg3bi2thinfilmthermoelectrics AT qingfengliu highperformingflexiblemg3bi2thinfilmthermoelectrics AT zhigangchen highperformingflexiblemg3bi2thinfilmthermoelectrics |