2W HBT Power Amplifier Module with Dual Second Harmonic Suppression Technique

This paper presents a high-power heterojunction bipolar transistor (HBT) power amplifier (PA) module designed for GSM/EDGE applications. The proposed HBT PA employs a differential output stage that delivers high output power at a low supply voltage. A transformer-based output matching network is emp...

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Bibliographic Details
Main Authors: Chul-Woo Byeon, Joon-Hyung Kim
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/25/4/1231
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