All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-...

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Bibliographic Details
Main Authors: Guiru Gu, Yunfeng Ling, Runyu Liu, Puminun Vasinajindakaw, Xuejun Lu, Carissa S. Jones, Wu-Sheng Shih, Vijaya Kayastha, Nick L. Downing, Xuliang Han, Harish Subbaraman, Dan Pham, Ray T. Chen, Maggie Yihong Chen, Urs Berger, Mike Renn
Format: Article
Language:English
Published: Wiley 2011-01-01
Series:Journal of Nanotechnology
Online Access:http://dx.doi.org/10.1155/2011/823680
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Summary:We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103 and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.
ISSN:1687-9503
1687-9511

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