Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure
In this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor process. Notably, the term "switched impedance...
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| Format: | Article |
| Language: | English |
| Published: |
The Korean Institute of Electromagnetic Engineering and Science
2025-03-01
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| Series: | Journal of Electromagnetic Engineering and Science |
| Subjects: | |
| Online Access: | https://www.jees.kr/upload/pdf/jees-2025-2-r-258.pdf |
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