Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure
In this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor process. Notably, the term "switched impedance...
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The Korean Institute of Electromagnetic Engineering and Science
2025-03-01
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| Series: | Journal of Electromagnetic Engineering and Science |
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| Online Access: | https://www.jees.kr/upload/pdf/jees-2025-2-r-258.pdf |
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| author | Byeong-Uk Lee |
| author_facet | Byeong-Uk Lee |
| author_sort | Byeong-Uk Lee |
| collection | DOAJ |
| description | In this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor process. Notably, the term "switched impedance network" not only refers to the role of isolating receive and transmit paths, which is typically performed by a switch, but also signifies the utilization of a switch as a matching network. The size and matching loss of the proposed MMIC is minimized by replacing the LNA input-matching network with a single-pole double-throw switch. The fabricated LNA MMIC exhibits a noise figure of 1.9–2.3 dB, gain of 16–17 dB, and input/output return loss of 6–30 dB at a frequency range of 8–10 GHz. Under pulse conditions, it presents a maximum input power of 37 dBm and a saturated output power of 19 dBm. |
| format | Article |
| id | doaj-art-36985c7c4b9440938fe712e4357b76e9 |
| institution | Kabale University |
| issn | 2671-7255 2671-7263 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | The Korean Institute of Electromagnetic Engineering and Science |
| record_format | Article |
| series | Journal of Electromagnetic Engineering and Science |
| spelling | doaj-art-36985c7c4b9440938fe712e4357b76e92025-08-20T03:53:46ZengThe Korean Institute of Electromagnetic Engineering and ScienceJournal of Electromagnetic Engineering and Science2671-72552671-72632025-03-0125213113610.26866/jees.2025.2.r.2583683Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise FigureByeong-Uk LeeIn this work, an X-band gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) with a switched impedance network for improved noise performance is designed and fabricated using a 0.25 μm GaN WIN-semiconductor process. Notably, the term "switched impedance network" not only refers to the role of isolating receive and transmit paths, which is typically performed by a switch, but also signifies the utilization of a switch as a matching network. The size and matching loss of the proposed MMIC is minimized by replacing the LNA input-matching network with a single-pole double-throw switch. The fabricated LNA MMIC exhibits a noise figure of 1.9–2.3 dB, gain of 16–17 dB, and input/output return loss of 6–30 dB at a frequency range of 8–10 GHz. Under pulse conditions, it presents a maximum input power of 37 dBm and a saturated output power of 19 dBm.https://www.jees.kr/upload/pdf/jees-2025-2-r-258.pdfganlnammicspdt switchx-band mmic |
| spellingShingle | Byeong-Uk Lee Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure Journal of Electromagnetic Engineering and Science gan lna mmic spdt switch x-band mmic |
| title | Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure |
| title_full | Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure |
| title_fullStr | Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure |
| title_full_unstemmed | Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure |
| title_short | Design of X-Band GaN LNA MMIC with Switched Impedance Network for Improved Noise Figure |
| title_sort | design of x band gan lna mmic with switched impedance network for improved noise figure |
| topic | gan lna mmic spdt switch x-band mmic |
| url | https://www.jees.kr/upload/pdf/jees-2025-2-r-258.pdf |
| work_keys_str_mv | AT byeonguklee designofxbandganlnammicwithswitchedimpedancenetworkforimprovednoisefigure |