Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer
A stacked nanocomposite zinc-tin oxide/single-walled carbon nanotubes (ZTO/SWNTs) active layer was fabricated for thin-film transistors (TFTs) as an alternative to the conventional single-layer structure of mixed ZTO and SWNTs. The stacked nanocomposite of the solution-processed TFTs was prepared us...
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MDPI AG
2024-12-01
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| author | Yong-Jae Kim Woon-Seop Choi |
| author_facet | Yong-Jae Kim Woon-Seop Choi |
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| description | A stacked nanocomposite zinc-tin oxide/single-walled carbon nanotubes (ZTO/SWNTs) active layer was fabricated for thin-film transistors (TFTs) as an alternative to the conventional single-layer structure of mixed ZTO and SWNTs. The stacked nanocomposite of the solution-processed TFTs was prepared using UV/O<sub>3</sub> treatment and multiple annealing steps for each layer. The electrical properties of the stacked device were superior to those of the single-layer TFT. The ZTO/SWNT TFT, fabricated using a stacked structure with ZTO on the top and SWNT at the bottom layer, showed a significant improvement in the field-effect mobility of 15.37 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mrow><mi>cm</mi></mrow><mrow><mn>2</mn></mrow></msup><mrow><mo>/</mo><mi mathvariant="normal">V</mi><mo>·</mo><mi mathvariant="normal">s</mi></mrow></mrow></semantics></math></inline-formula> (factor of three increase) and an I<sub>on</sub>/I<sub>off</sub> current ratio of 8.83 × <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mrow><mn>10</mn></mrow><mrow><mn>8</mn></mrow></msup></mrow></semantics></math></inline-formula> with improved hysteresis. This outcome was attributed to the surface treatment and multiple annealing of the selected active layer, resulting in improved contact and a dense structure. This was also attributed to the controlled dispersion of SWNT, as electron migration paths without dispersants. This study suggests the potential expansion of applications, such as flexible electronics and low-cost fabrication of TFTs. |
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| institution | Kabale University |
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| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj-art-360cb55ca9bd40d59d2cfd4f0d453f102025-01-10T13:19:17ZengMDPI AGNanomaterials2079-49912024-12-011512210.3390/nano15010022Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active LayerYong-Jae Kim0Woon-Seop Choi1Department of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of KoreaDepartment of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of KoreaA stacked nanocomposite zinc-tin oxide/single-walled carbon nanotubes (ZTO/SWNTs) active layer was fabricated for thin-film transistors (TFTs) as an alternative to the conventional single-layer structure of mixed ZTO and SWNTs. The stacked nanocomposite of the solution-processed TFTs was prepared using UV/O<sub>3</sub> treatment and multiple annealing steps for each layer. The electrical properties of the stacked device were superior to those of the single-layer TFT. The ZTO/SWNT TFT, fabricated using a stacked structure with ZTO on the top and SWNT at the bottom layer, showed a significant improvement in the field-effect mobility of 15.37 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mrow><mi>cm</mi></mrow><mrow><mn>2</mn></mrow></msup><mrow><mo>/</mo><mi mathvariant="normal">V</mi><mo>·</mo><mi mathvariant="normal">s</mi></mrow></mrow></semantics></math></inline-formula> (factor of three increase) and an I<sub>on</sub>/I<sub>off</sub> current ratio of 8.83 × <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msup><mrow><mn>10</mn></mrow><mrow><mn>8</mn></mrow></msup></mrow></semantics></math></inline-formula> with improved hysteresis. This outcome was attributed to the surface treatment and multiple annealing of the selected active layer, resulting in improved contact and a dense structure. This was also attributed to the controlled dispersion of SWNT, as electron migration paths without dispersants. This study suggests the potential expansion of applications, such as flexible electronics and low-cost fabrication of TFTs.https://www.mdpi.com/2079-4991/15/1/22oxide TFTsemiconductorcarbon nanotubenanocomposite |
| spellingShingle | Yong-Jae Kim Woon-Seop Choi Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer Nanomaterials oxide TFT semiconductor carbon nanotube nanocomposite |
| title | Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer |
| title_full | Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer |
| title_fullStr | Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer |
| title_full_unstemmed | Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer |
| title_short | Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer |
| title_sort | electrical characteristics of solution based thin film transistors with a zinc tin oxide carbon nanotube stacked nanocomposite active layer |
| topic | oxide TFT semiconductor carbon nanotube nanocomposite |
| url | https://www.mdpi.com/2079-4991/15/1/22 |
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