Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films

Abstract Charged domain walls in ferroelectrics hold great promise for applications in ferroelectric random‐access memory (FeRAM), with advantages such as low energy consumption, high density, and non‐destructive operation. Due to the mechanical compatibility condition, the neutral domain walls are...

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Bibliographic Details
Main Authors: Xin Li, Cheng Li, Linming Zhou, Xiangwei Guo, Yuhui Huang, Hui Zhang, Shurong Dong, Yongjun Wu, Zijian Hong
Format: Article
Language:English
Published: Wiley-VCH 2025-02-01
Series:Advanced Electronic Materials
Subjects:
charged domain walls
molecular ferroelectrics
phase‐field simulations
switching kinetics
Online Access:https://doi.org/10.1002/aelm.202400324
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