Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films
Abstract Charged domain walls in ferroelectrics hold great promise for applications in ferroelectric random‐access memory (FeRAM), with advantages such as low energy consumption, high density, and non‐destructive operation. Due to the mechanical compatibility condition, the neutral domain walls are...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400324 |
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| author | Xin Li Cheng Li Linming Zhou Xiangwei Guo Yuhui Huang Hui Zhang Shurong Dong Yongjun Wu Zijian Hong |
| author_facet | Xin Li Cheng Li Linming Zhou Xiangwei Guo Yuhui Huang Hui Zhang Shurong Dong Yongjun Wu Zijian Hong |
| author_sort | Xin Li |
| collection | DOAJ |
| description | Abstract Charged domain walls in ferroelectrics hold great promise for applications in ferroelectric random‐access memory (FeRAM), with advantages such as low energy consumption, high density, and non‐destructive operation. Due to the mechanical compatibility condition, the neutral domain walls are dominant in traditional ferroelectric thin films. Herein, using phase‐field simulations, the formation of intrinsically stable charged domain walls (CDWs) in the molecular ferroelectric films is demonstrated, which can be mainly attributed to the small mechanical stiffness. The switching kinetics are further investigated for the CDWs, showing a lower switching barrier as compared to the neutral counterparts. Moreover, it is indicated that increasing the compressive misfit strain can lead to prolonged switching time, with a significantly increased switching energy barrier. These findings pave the way for the potential applications of metal‐free organic ferroelectric materials in FeRAM devices. |
| format | Article |
| id | doaj-art-35f33ddda675461f8091de3c6ebcbbe2 |
| institution | DOAJ |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-35f33ddda675461f8091de3c6ebcbbe22025-08-20T03:12:20ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-02-01112n/an/a10.1002/aelm.202400324Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin FilmsXin Li0Cheng Li1Linming Zhou2Xiangwei Guo3Yuhui Huang4Hui Zhang5Shurong Dong6Yongjun Wu7Zijian Hong8State Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 ChinaInstitute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU‐Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200 ChinaInstitute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU‐Hangzhou Global Scientific and Technological Innovation Center Hangzhou 311200 ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 ChinaState Key Laboratory of Silicon and Advanced Semiconductor Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310058 ChinaAbstract Charged domain walls in ferroelectrics hold great promise for applications in ferroelectric random‐access memory (FeRAM), with advantages such as low energy consumption, high density, and non‐destructive operation. Due to the mechanical compatibility condition, the neutral domain walls are dominant in traditional ferroelectric thin films. Herein, using phase‐field simulations, the formation of intrinsically stable charged domain walls (CDWs) in the molecular ferroelectric films is demonstrated, which can be mainly attributed to the small mechanical stiffness. The switching kinetics are further investigated for the CDWs, showing a lower switching barrier as compared to the neutral counterparts. Moreover, it is indicated that increasing the compressive misfit strain can lead to prolonged switching time, with a significantly increased switching energy barrier. These findings pave the way for the potential applications of metal‐free organic ferroelectric materials in FeRAM devices.https://doi.org/10.1002/aelm.202400324charged domain wallsmolecular ferroelectricsphase‐field simulationsswitching kinetics |
| spellingShingle | Xin Li Cheng Li Linming Zhou Xiangwei Guo Yuhui Huang Hui Zhang Shurong Dong Yongjun Wu Zijian Hong Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films Advanced Electronic Materials charged domain walls molecular ferroelectrics phase‐field simulations switching kinetics |
| title | Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films |
| title_full | Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films |
| title_fullStr | Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films |
| title_full_unstemmed | Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films |
| title_short | Intrinsically Stable Charged Domain Walls in Molecular Ferroelectric Thin Films |
| title_sort | intrinsically stable charged domain walls in molecular ferroelectric thin films |
| topic | charged domain walls molecular ferroelectrics phase‐field simulations switching kinetics |
| url | https://doi.org/10.1002/aelm.202400324 |
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