Investigation of SiC MOSFET Structures for Surge Robustness in the Third Quadrant Under Various <inline-formula><tex-math notation="LaTeX">$V_{\text{GS}}$</tex-math></inline-formula> Biases
In this work, SiC planar-gate MOSFET (PG-MOS), SiC short-channel (0.3<inline-formula><tex-math notation="LaTeX">$\mathbf {\mu m}$</tex-math></inline-formula>) MOSFET (SCMOS), and SiC JBSFET are tested for the third quadrant I-V temperature characteristics and surge...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Open Journal of Power Electronics |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11023073/ |
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